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2SAR567F3TR

ROHM

2SAR567F3TR by ROHM

ROHM 2SAR567F3TR is a PNP BJT transistor with VCEsat of 0.2V, hFE of 120, and IC of 2.5A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 220MHz. Suitable for surface mount designs with a max operating temperature of 150°C.

Median Price

$1.080

Lifecycle Status

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1k+

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Farnell

UK . 2,900 parts In-Stock

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$1.080

100+ parts

$0.602

1k+ parts

$0.371

10k+ parts

$0.369

2,900

$1.080

$0.602

$0.371

$0.369

Newark

USA . 2,900 parts In-Stock

1+ parts

$1.210

100+ parts

$0.617

1k+ parts

$0.428

10k+ parts

-

2,900

$1.210

$0.617

$0.428

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Mouser Electronics

USA . 5,817 parts In-Stock

1+ parts

$1.510

100+ parts

$0.634

1k+ parts

$0.453

10k+ parts

$0.355

5,817

$1.510

$0.634

$0.453

$0.355

DigiKey

USA . 2,608 parts In-Stock

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$1.510

100+ parts

$0.634

1k+ parts

$0.453

10k+ parts

$0.355

2,608

$1.510

$0.634

$0.453

$0.355

Element14

Singapore . 2,900 parts In-Stock

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-

100+ parts

$1.030

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$0.629

10k+ parts

$0.604

2,900

-

$1.030

$0.629

$0.604

Chip1Stop

Japan . 340 parts In-Stock

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-

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$0.389

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$0.295

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340

-

$0.389

$0.295

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Verical

USA . 290 parts In-Stock

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$0.589

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290

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$0.589

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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100

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CoreStaff

Japan . 50 parts In-Stock

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$0.705

100+ parts

$0.320

1k+ parts

$0.273

10k+ parts

-

50

$0.705

$0.320

$0.273

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Microchip USA

USA . 7,332 parts In-Stock

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$3.461

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7,332

$3.461

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Overview

Unlock the potential of your electronic projects with the 2SAR567F3TR by ROHM. With a reputation for quality and reliability, ROHM's small signal bipolar junction transistors are perfect for applications like amplifiers. Designed for easy installation with a surface-mount package, this PNP transistor offers low VCEsat and high DC current gain, ensuring optimal performance. Trust ROHM to deliver value and performance in every component, making your projects shine brighter than ever before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and assembly, making it easy to integrate into a circuit.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy mounting on circuit boards, saving space and simplifying assembly.

Maximum VCEsat: 0.2 V

Low VCEsat minimizes power losses and improves efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting on circuit boards, optimizing space usage.

No. of Terminals: 3

3 terminals provide necessary connections for the transistor in a circuit, ensuring proper functionality.

Maximum Power Dissipation (Abs): 2.1 W

High power dissipation capability enables the transistor to handle power efficiently in amplifier applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on circuit boards and allows for dense packing of components.

Minimum DC Current Gain (hFE): 120

High minimum DC current gain ensures stable and predictable amplification in circuits using this transistor.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to operate reliably in a wide range of environmental conditions.

Maximum Collector-Base Capacitance: 40 pF

Low collector-base capacitance minimizes signal distortion and ensures high-frequency performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 120 V

High maximum collector-emitter voltage rating provides protection and reliability in amplifier circuits with varying voltage levels.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its reliable performance and stability in various operating conditions.

Maximum Collector Current (IC): 2.5 A

High maximum collector current rating allows the transistor to handle large currents in amplifier circuits without damage.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and allows for easy connections in amplifier applications.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and ensures proper current flow in amplifier circuits.

Nominal Transition Frequency (fT): 220 MHz

High nominal transition frequency indicates fast switching speed and high-frequency performance in amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SAR567F3TR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

40 pF

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

S-PDSO-N3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.2 V

Trade Compliance

2SAR567F3TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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