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71V016SA15PHGI8

Renesas Electronics

71V016SA15PHGI8 by Renesas Electronics

Renesas Electronics' 71V016SA15PHGI8 is a 64KX16 SRAM with 3.3V supply voltage, operating in asynchronous mode. It features a small outline, thin profile package and offers fast access time of 15 ns. Ideal for applications requiring high-speed memory operations such as networking equipment and industrial automation systems.

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Overview

Experience unparalleled quality and reliability with the 71V016SA15PHGI8 by Renesas Electronics. This SRAM memory device offers exceptional performance in a wide range of applications, thanks to its innovative design and advanced technology. Customers can expect seamless operation, fast access times, and low power consumption, making it the ideal choice for demanding projects. Trust Renesas Electronics for cutting-edge solutions that deliver value, efficiency, and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the electronics inside.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Operating Mode: ASYNCHRONOUS

Enables independent operation without the need for a clock signal.

Nominal Supply Voltage / Vsup (V): 3.3

Standard voltage requirement for many electronic devices.

Organization: 64KX16

Provides a large memory capacity for data storage.

Output Characteristics: 3-STATE

Allows for high impedance output when disabled, reducing power consumption.

Peak Reflow Temperature °C: 260

Ensures that the component can withstand high-temperature soldering processes.

Technology: CMOS

Offers low power consumption and high noise immunity.

Memory Width: 16

Provides sufficient data width for storing and retrieving information.

Moisture Sensitivity Level (MSL): 3

Indicates that the component has moderate sensitivity to moisture, suitable for most environments.

Technical Specifications

SRAM 71V016SA15PHGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

15 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.41 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

44

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX16

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.01 Amp

Minimum Standby Voltage:

3.15 V

Maximum Supply Current:

130 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

71V016SA15PHGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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