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3SK138

Renesas Technology

3SK138 by Renesas Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Case Connection: SOURCE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 334 parts In-Stock

1+ parts

$2.090

100+ parts

-

1k+ parts

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10k+ parts

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334

$2.090

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Northwest PG Solutions

USA . 441 parts In-Stock

1+ parts

$2.299

100+ parts

-

1k+ parts

-

10k+ parts

-

441

$2.299

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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306,000

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) 3SK138 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Renesas Technology

Specs

Case Connection:

SOURCE

Configuration:

Maximum Drain Current (ID):

.035 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

3SK138 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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