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2SK2730-E

Renesas Technology

2SK2730-E by Renesas Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Drain-Source On Resistance: .24 ohm; Terminal Position: SINGLE;

Median Price

$39.200

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 6 parts In-Stock

1+ parts

$39.200

100+ parts

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1k+ parts

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6

$39.200

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Distributors (Availability)

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Corohmni

South Africa . 410 parts In-Stock

1+ parts

$0.327

100+ parts

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10k+ parts

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410

$0.327

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Advanced Electronics

New Zealand . 35 parts In-Stock

1+ parts

$1.305

100+ parts

$1.188

1k+ parts

$1.070

10k+ parts

-

35

$1.305

$1.188

$1.070

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Northwest PG Solutions

USA . 1,561 parts In-Stock

1+ parts

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100+ parts

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1,561

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Native Components

USA . 61 parts In-Stock

1+ parts

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61

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Technical Specifications

Power Field Effect Transistors (FET) 2SK2730-E attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Technology

Specs

Avalanche Energy Rating (EAS):

35 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

25 A

Maximum Drain Current (ID):

25 A

Maximum Drain-Source On Resistance:

.24 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

100 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SK2730-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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