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RJK0305DPB-00-J0

Renesas Electronics

RJK0305DPB-00-J0 by Renesas Electronics

Renesas Electronics RJK0305DPB-00-J0 is a N-channel FET with 30V DS breakdown voltage and 120A IDM. Ideal for switching applications, it has a max power dissipation of 45W and 0.013 ohm RDS(on). Suitable for enhancement mode operation at up to 150°C, this MOSFET features gull wing terminals in a small outline package.

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Overview

Renesas Electronics presents the RJK0305DPB-00-J0, a high-quality N-CHANNEL Power Field Effect Transistor with a single configuration and built-in diode. Ideal for switching applications, this FET offers exceptional performance and reliability. With a maximum pulsed drain current of 120A and a minimum DS breakdown voltage of 30V, this transistor is designed to handle demanding tasks with ease. Whether you're looking to optimize power efficiency or enhance overall system performance, the RJK0305DPB-00-J0 delivers the value and benefits you need. Upgrade your projects with Renesas Electronics today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for applications where weight and durability are important factors.

Polarity or Channel Type: N-CHANNEL

N-channel FETs have lower on-resistance and higher efficiency compared to P-channel FETs, making them a preferred choice for many switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current flow protection, making this FET suitable for applications where protection against reverse current is necessary.

Transistor Application: SWITCHING

Designed specifically for high-speed switching applications, this FET offers fast switching speeds and low on-resistance, resulting in improved efficiency.

Surface Mount: YES

The surface mount capability makes installation of this FET quick and easy, saving time and labor costs during assembly.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET can handle higher voltage applications without the risk of damage or failure.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration into compact designs, making this FET suitable for space-constrained applications.

Terminal Form: GULL WING

The gull-wing terminal form provides strong mechanical connections, ensuring reliable performance in high-stress environments.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for improved control over the FET's conductivity, making it easier to switch devices on and off as needed.

Maximum Pulsed Drain Current (IDM): 120 A

With a high pulsed drain current rating of 120A, this FET can handle brief surges of current without overheating or damage.

Maximum Drain Current (Abs) (ID): 30 A

The maximum drain current of 30A ensures that this FET can reliably handle continuous current flow without exceeding its limits.

No. of Terminals: 4

With four terminals, this FET offers versatile connection options, allowing for flexible circuit designs and configurations.

Maximum Power Dissipation (Abs): 45 W

The high power dissipation rating of 45W allows this FET to handle high power loads without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making this FET suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The use of metal-oxide semiconductor technology results in improved efficiency and reliability, making this FET a high-performance option.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can operate in high-temperature environments without performance degradation.

Transistor Element Material: SILICON

The silicon transistor element material offers high conductivity and stability, ensuring consistent performance over time.

Maximum Drain-Source On Resistance: 0.013 ohm

The low drain-source on-resistance of 0.013 ohm minimizes power losses and improves efficiency in high-current applications.

Terminal Position: SINGLE

The single terminal position simplifies installation and reduces the risk of wiring errors, ensuring quick and easy integration into circuits.

Case Connection: DRAIN

The drain case connection provides a secure and reliable connection point, ensuring optimal performance and stability in various applications.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for safe and efficient soldering processes, ensuring a strong and durable connection between the FET and the circuit board.

Technical Specifications

Power Field Effect Transistors (FET) RJK0305DPB-00-J0 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

30 A

Maximum Drain Current (ID):

30 A

Maximum Drain-Source On Resistance:

.013 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

120 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RJK0305DPB-00-J0 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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