Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Renesas Electronics' RJK0305DPB-00#J0 is an N-channel FET with 30V DS breakdown voltage and 120A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.013 ohm max RDS(on), and operates in enhancement mode. The small outline package has Gull Wing terminals and a drain case connection.
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The use of plastic/epoxy material ensures durability and protection for the internal components of the FET.
N-channel FETs typically have better performance and efficiency compared to P-channel FETs, making this product a good choice for various applications.
The built-in diode simplifies circuit design and saves space on the PCB, making this FET convenient for use in compact electronic devices.
Designed specifically for switching applications, this FET ensures fast and efficient operation in various electronic circuits.
Being surface mountable allows for easy and quick installation on circuit boards, making this FET suitable for automated assembly processes.
With a minimum breakdown voltage of 30 V, this FET can handle higher voltages without the risk of damage, providing reliability in different operating conditions.
The rectangular package shape offers compatibility with standard PCB layouts and facilitates efficient heat dissipation, enhancing the overall performance of the FET.
The gull wing terminal form allows for easy soldering onto the PCB, ensuring a secure connection and reliable performance of the FET in electronic circuits.
Enhancement mode FETs offer better control over the conductivity of the channel, resulting in precise switching characteristics and improved efficiency in circuit operation.
With a high maximum pulsed drain current of 120 A, this FET can handle peak power demands in transient conditions, making it suitable for high-power applications.
Having 4 terminals allows for versatile connection options in circuit designs, enabling flexibility and customization to meet specific application requirements.
The small outline package style saves space on the PCB and enables compact designs, making this FET ideal for applications where size constraints are a concern.
The metal-oxide semiconductor technology used in this FET ensures reliability, high performance, and low power consumption, making it suitable for a wide range of electronic applications.
Silicon is a widely used material for transistor elements due to its semiconductor properties, ensuring high efficiency, durability, and performance of the FET in electronic circuits.
With a maximum drain current of 30 A, this FET can handle high current loads in various applications, ensuring reliable and stable operation under demanding conditions.
The low drain-source on resistance of 0.013 ohm minimizes power loss and heat generation in the FET, resulting in improved efficiency and performance in circuit operation.
Having a single terminal position simplifies circuit connections and ensures proper alignment during installation, making this FET easy to use for both experienced engineers and hobbyists.
The drain case connection allows for effective heat dissipation and thermal management, ensuring the FET operates at optimal temperatures for long-term reliability and performance.
Power Field Effect Transistors (FET) RJK0305DPB-00#J0 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Electronics
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RJK0305DPB-00#J0 Transistors trade compliance attributes, and parameters.
ECCN
5A002
ECCN Governance
EAR
1N4148
Microchip Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
M39029/58-360
Itt Cannon
CONNECTOR ACCESSORY; Alternate Contacts: 030-2042-000; DIN Conformity: NO; Contact Gender: MALE; Terminal Type: WIRE; MIL-Connector Accessory Name: CONTACT;
LL4148
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BSS123,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
C0603C104K5RACAUTO
KEMET Corporation
KEMET C0603C104K5RACAUTO is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for automotive applications meeting AEC-Q200 standard, it comes in SMT package with matte tin finish and wraparound terminals.
SMBJ18CA
Transpro Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Breakdown Voltage: 21.1 V; Maximum Clamping Voltage: 29.2 V;
1554216002
Molex
WIRE AND CABLE;
OPA2277UA/2K5
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
MMBF170LT1G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
RC0805FR-0710KL
Yageo
Yageo's RC0805FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. Ideal for applications requiring resistance to operate b/w -55°C to 155°C, such as in automotive electronics or industrial control systems. Features metal glaze/thick film technology and matte tin finish with nickel barrier.
BAV99
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FT232RQ-REEL
FTDI
FTDI's FT232RQ-REEL is a USB bus controller with 32 terminals, operating at 3.3-5.25V. It supports data transfer rates up to 60MBps and clock frequency of 12.02MHz, suitable for RS232/RS422/RS485 interfaces in various applications like industrial automation and communication systems.
LM555CN
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Shape: RECTANGULAR; Surface Mount: NO; No. of Functions: 1;
CGA3E2X7R1H104K080AA
TDK
CGA3E2X7R1H104K080AA by TDK is a fixed ceramic capacitor with a capacitance of 0.1 uF and a rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate at temperatures ranging from -55 to 125 °C. This capacitor is commonly used in surface mount applications for various electronic devices.
IRLML6402TRPBF
Infineon Technologies
IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.
Pulse Electronics
LM317T
Samsung
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel; Maximum Line Regulation (%/V): .07;
Fairchild Semiconductor
M24308/2-1F
Esterline Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Option-1: HOLE .115-.125; Mounting Type: CABLE AND PANEL; Mating Contact Finish: NOT SPECIFIED;
IRF640
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
BSP297H6327XTSA1
Infineon's BSP297H6327XTSA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for power applications. Features include 2.64A IDM, 1.8Ω RDS(on), and AEC-Q101 compliance. Suitable for enhancement mode operation in automotive electronics due to its high reliability and performance.
ZVN2110GTA
Diodes Incorporated
ZVN2110GTA by Diodes Inc. is a N-CHANNEL power FET with 100V DS breakdown voltage, 6A IDM, and 4 ohm RDS(on). It is used for switching applications in small outline packages.
IRLML9301TRPBF
Infineon's IRLML9301TRPBF is a P-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 15A IDM, and 0.064 ohm RDS(ON). With a small outline package style, it operates b/w -55 to 150 °C and has a max power dissipation of 1.3W.
IRF7425TRPBF-1
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;
IRF840SPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (ID): 8 A; Qualification: Not Qualified;
AUIRF5210STRL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Maximum Pulsed Drain Current (IDM): 140 A; Transistor Element Material: SILICON;
IRLML6401TRPBF-1
Infineon's IRLML6401TRPBF-1 is a P-channel FET with 12V DS breakdown voltage, 34A IDM, and 0.05 ohm RDS(on). Ideal for power management applications due to its small outline package style and high operating temperature of 150°C.
2N7002
Comchip Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
AUIRF3205
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (ID): 75 A; Maximum Drain Current (Abs) (ID): 75 A;
IRF640PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
FDS2572
Onsemi
FDS2572 by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 4.9A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.5W and can withstand temperatures from -55 to 150 °C.
IRFP4568PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 517 W; Terminal Finish: MATTE TIN OVER NICKEL; Peak Reflow Temperature (C): 250;
FDMS86252L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Case Connection: DRAIN; No. of Elements: 1;
FDML7610S
The Onsemi FDML7610S is an N-CHANNEL Power FET with 2 SERIES elements and built-in diode. It has a Max Drain Current of 60A, Min DS Breakdown Voltage of 30V, and Max Pulsed Drain Current of 40A. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 2.2W at a temperature up to 150°C.
IRF9358TRPBF
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 210 mJ;
SI7315DN-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI7315DN-T1-GE3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a 10A IDM and 0.315 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE with a 9.8mJ EAS rating. Suitable for surface mount designs, it has a SQUARE package shape and DUAL terminal position.
IRF530PBF-BE3
Power Field-Effect Transistors;
FQD2N100TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Minimum DS Breakdown Voltage: 1000 V; Avalanche Energy Rating (EAS): 160 mJ;
IPP120P04P4L03AKSA2
IPP120P04P4L03AKSA2 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 480A IDM, and 0.0052 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance and 175°C max operating temp.
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RJK0651DPB-00-J5
Renesas Electronics
Renesas Electronics RJK0651DPB-00-J5 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 100A IDM, and 0.018 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power tasks.
RJK0651DPB-00#J5
Renesas Electronics RJK0651DPB-00#J5 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. Features include 100A max pulsed drain current, 11.7mJ avalanche energy rating, and 0.018 ohm max drain-source resistance. Its small outline package and nickel palladium gold finish make it suitable for high-power enhancement mode operations up to 150°C.
RJK0305DPB-02#J0
Renesas Electronics RJK0305DPB-02#J0 is a N-channel FET with 30V DS breakdown voltage, 120A IDM, and 0.013 ohm max RDS(on). Ideal for switching applications in enhancement mode operation. Features gull wing terminals, built-in diode, and small outline package style.
RJK0305DPB-00-J0
Renesas Electronics RJK0305DPB-00-J0 is a N-channel FET with 30V DS breakdown voltage and 120A IDM. Ideal for switching applications, it has a max power dissipation of 45W and 0.013 ohm RDS(on). Suitable for enhancement mode operation at up to 150°C, this MOSFET features gull wing terminals in a small outline package.
Renesas Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN;
RJK0330DPB-00-J0
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Maximum Drain-Source On Resistance: .0039 ohm; No. of Terminals: 4;
RJK0328DPB-01-J0
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; No. of Terminals: 4; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
RJK0656DPB-00#J5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE; Peak Reflow Temperature (C): NOT SPECIFIED;
RJK0656DPB-00-J5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; JESD-30 Code: R-PSSO-G4; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0056 ohm; Maximum Pulsed Drain Current (IDM): 160 A; Package Shape: RECTANGULAR;
RJK0451DPB-00#J5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Case Connection: DRAIN; Maximum Pulsed Drain Current (IDM): 140 A;
RJK0451DPB-00-J5
Renesas Electronics' RJK0451DPB-00-J5 is a N-channel power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 140A and a max power dissipation of 45W. This transistor is commonly used for switching applications in various electronic devices.
RJK0330DPB-01-J0
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Minimum DS Breakdown Voltage: 30 V; Maximum Pulsed Drain Current (IDM): 180 A;
RJK0212DPA-00-J53
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Finish: NICKEL PALLADIUM GOLD; Transistor Application: SWITCHING;
RJK0206DPA-00-J5A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
RJK0212DPA-00-J5A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (ID): 25 A; No. of Elements: 1;
RJK0213DPA-00-J53
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Terminal Position: DUAL; Maximum Drain Current (Abs) (ID): 60 A;
RJK0204DPA-00-J5A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
RJK0301DPB-EL-E
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN; Maximum Drain Current (ID): 60 A;
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