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7134LA20JG8

Renesas Electronics

7134LA20JG8 by Renesas Electronics

The Renesas Electronics 7134LA20JG8 is a 4Kx8 MULTI-PORT SRAM chip with 4096 words and 32768 bits memory density. It operates at a max speed of 20ns, has an output type of 3-STATE, and supports asynchronous mode. Ideal for applications requiring fast and efficient data storage and retrieval in commercial temperature environments.

Median Price

$24.674

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

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$24.674

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$24.674

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VNN

France . 5,633 parts In-Stock

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Vyrian

USA . 882 parts In-Stock

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882

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AZTECH Wire

Italy . 435 parts In-Stock

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$10.048

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Continental Prestige Electronics

USA . 3,020 parts In-Stock

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$24.674

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$24.181

3,020

$24.674

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Netroflash

USA . 100 parts In-Stock

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$24.674

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$23.441

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$22.947

100

$24.674

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$23.441

$22.947

Ampacity Inc.

Singapore . 921 parts In-Stock

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$25.000

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Microchip USA

USA . 2,620 parts In-Stock

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$63.607

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Component Stockers USA

USA . 389 parts In-Stock

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$337.870

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Argo Parts USA

USA . 3,643 parts In-Stock

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Overview

Experience seamless and reliable performance with the 7134LA20JG8 by Renesas Electronics, a top-tier manufacturer known for their quality products. This Multi-Port SRAM offers unparalleled value with its 4Kx8 organization, providing fast access times of 20 ns and low standby current of 0.0015 Amp. Perfect for a wide range of applications, this chip carrier package is ideal for customers seeking high-speed memory solutions without compromising on quality or reliability. Trust Renesas Electronics to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the product resistant to damage and suitable for various environments.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard voltage level, ensuring compatibility with common power sources.

No. of Terminals: 52

Offers multiple connection points for versatile integration into electronic systems.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures, making it suitable for applications where heat may be a factor.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed performance, enhancing overall efficiency.

Memory Density: 32768 bit

Provides ample storage capacity for data handling, ensuring optimal performance in memory-intensive tasks.

Maximum Access Time: 20 ns

Enables quick access to stored information, reducing latency and improving overall system responsiveness.

Technical Specifications

SRAM 7134LA20JG8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

20 ns

Additional Features:

AUTOMATIC POWER-DOWN; BATTERY BACKUP

Input/Output Type:

COMMON

JESD-30 Code:

S-PQCC-J52

JESD-609 Code:

e3

Length:

19.1262 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

52

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC52,.8SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Standby Current:

.0015 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

240 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

19.1262 mm

Trade Compliance

7134LA20JG8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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