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2SJ128

Renesas Electronics

2SJ128 by Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN;

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Legend Electronics Inc.

USA . 7,273 parts In-Stock

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Vyrian

USA . 55 parts In-Stock

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55

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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A-Z Elektronik GmbH

Germany . 8,250 parts In-Stock

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8,250

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Kepictronics

USA . 5,000 parts In-Stock

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5,000

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Infinite Electronics LLP (Excess)

. 2,000 parts In-Stock

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2,000

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Northwest PG Solutions

USA . 369 parts In-Stock

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369

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Native Components

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137

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Technical Specifications

Power Field Effect Transistors (FET) 2SJ128 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

8 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SJ128 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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