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2SC3554-T1-AZ

Renesas Electronics

2SC3554-T1-AZ by Renesas Electronics

2SC3554-T1-AZ by Renesas Electronics is a NPN BJT transistor with a hFE of 60 and VCE of 300V, ideal for switching applications. It comes in a small outline package with surface mount capability, featuring a max collector current of 0.2A and transition frequency of 50MHz.

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Overview

Unlock the power of advanced technology with the 2SC3554-T1-AZ by Renesas Electronics. Renowned for their superior quality and reliability, Renesas Electronics delivers cutting-edge solutions in the Small Signal Bipolar Junction Transistors (BJT) category. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 300V and a minimum DC current gain of 60. With a compact design and surface mount capabilities, this transistor is perfect for a wide range of electronic projects. Experience unmatched performance and efficiency with the 2SC3554-T1-AZ from Renesas Electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and cost-effective, making it ideal for applications where weight and cost are important factors.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable and efficient performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on circuit boards, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

Rectangular shape enables efficient placement on circuit boards and allows for close packing of components, maximizing use of available space.

Terminal Form: FLAT

Flat terminals facilitate easy soldering and connection, ensuring a secure and reliable electrical connection.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit design and connection options, making the transistor adaptable to a variety of applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and enables compact and efficient design of electronic systems.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures stable and reliable amplification of signals in the circuit, providing consistent performance.

Maximum Collector-Emitter Voltage: 300 V

With a high maximum collector-emitter voltage rating of 300V, this transistor can handle high voltage applications with ease, making it versatile and reliable.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties, high thermal conductivity, and reliability, ensuring long-lasting performance of the transistor.

Maximum Collector Current (IC): 0.2 A

The maximum collector current rating of 0.2A is suitable for low to medium power applications, making this transistor ideal for various electronic circuits.

Terminal Position: SINGLE

Single terminal position simplifies circuit integration and connection, making it easy to incorporate the transistor into a wide range of electronic systems.

Case Connection: COLLECTOR

Having the case connection at the collector terminal enhances thermal management and allows for efficient dissipation of heat, improving overall performance and reliability.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency of 50MHz enables fast switching speeds and reliable performance in high-frequency applications, making this transistor suitable for demanding applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC3554-T1-AZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC3554-T1-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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