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2SC3279M

Bytesonic Electronics

2SC3279M by Bytesonic Electronics

2SC3279M by Bytesonic Electronics is a NPN BJT transistor with max VCEsat of 0.82V, hFE of 200, and fT of 150MHz. Ideal for amplifier applications due to its high gain, low saturation voltage, and fast transition frequency capabilities.

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Overview

Unleash the power of innovation with Bytesonic Electronics' 2SC3279M Small Signal Bipolar Junction Transistor. Designed to amplify signals with precision and efficiency, this NPN transistor offers superior performance in a variety of applications, making it a versatile solution for your electronics projects. With a maximum VCEsat of 0.82V and a minimum DC current gain of 200, this transistor delivers reliable results while maximizing power dissipation. Trust Bytesonic Electronics for high-quality components that drive success in your designs. Elevate your projects with the 2SC3279M and experience unmatched performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent thermal conductivity and electrical insulation, ensuring reliable performance.

Polarity or Channel Type: NPN

Common and widely used type of transistor for various applications.

Configuration: SINGLE

Simplified design and easy to use for basic amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification of signals, making it suitable for amplifier circuits.

Maximum VCEsat: 0.82 V

Low saturation voltage allows for efficient operation and minimal power loss.

Package Shape: ROUND

Compact shape for easy mounting and space-saving layouts.

Terminal Form: THROUGH-HOLE

Allows for strong physical connection and easy soldering on PCBs.

No. of Terminals: 3

Simple and straightforward pinout configuration for easy integration in circuits.

Maximum Power Dissipation (Abs): 0.75 W

Can handle moderate power dissipation without overheating.

Package Style (Meter): CYLINDRICAL

Unique package style for distinctive design and mounting options.

Maximum Power Dissipation Ambient: 0.75 W

Can operate efficiently at maximum power dissipation in ambient conditions.

Minimum DC Current Gain (hFE): 200

High current gain ensures proper amplification of signals.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures for reliable operation in various environments.

Maximum Collector-Base Capacitance: 27 pF

Low capacitance for minimal impact on high-frequency signal response.

Maximum Collector-Emitter Voltage: 10 V

Sufficient voltage rating for handling different operating conditions.

Transistor Element Material: SILICON

Common and proven material for reliable transistor performance.

Minimum Operating Temperature: -55 °C

Can operate in extreme cold temperatures without issues.

Maximum Collector Current (IC): 2 A

High collector current rating for handling larger current loads.

Terminal Position: BOTTOM

Easy placement and connection on PCBs for efficient circuit design.

Nominal Transition Frequency (fT): 150 MHz

High frequency capability for fast switching and amplification of signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC3279M attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Bytesonic Electronics

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

27 pF

Maximum Collector-Emitter Voltage:

10 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.75 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.82 V

Trade Compliance

2SC3279M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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