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BSS83T/R

Philips Semiconductors

BSS83T/R by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .23 W; Operating Mode: ENHANCEMENT MODE; Peak Reflow Temperature (C): 260;

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Anansix

USA . 2,713 parts In-Stock

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Digiode

USA . 1,384 parts In-Stock

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Vyrian

USA . 167 parts In-Stock

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Native Components

USA . 33 parts In-Stock

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$0.566

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Northwest PG Solutions

USA . 854 parts In-Stock

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$0.623

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854

$0.623

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One Stop Electronics

USA . 514 parts In-Stock

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$29.050

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Corphita

USA . 4,967 parts In-Stock

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UNI Independent Distributors

Spain . 4,712 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) BSS83T/R attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.05 A

Maximum Drain Current (ID):

.05 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

125 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

BSS83T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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