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BF1108

Philips Semiconductors

BF1108 by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Maximum Drain Current (ID): .01 A; JESD-609 Code: e3;

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3

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1k+

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Digiode

USA . 2,882 parts In-Stock

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Vyrian

USA . 1,739 parts In-Stock

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Anansix

USA . 1,348 parts In-Stock

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One Stop Electronics

USA . 744 parts In-Stock

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$8.050

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Assy Fe

Spain . 369,000 parts In-Stock

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Lixinc

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UNI Independent Distributors

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Corphita

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Kepictronics

USA . 3,300 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,740 parts In-Stock

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Northwest PG Solutions

USA . 1,592 parts In-Stock

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Native Components

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Technical Specifications

Power Field Effect Transistors (FET) BF1108 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.01 A

Maximum Drain Current (ID):

.01 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

No. of Elements:

1

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

BF1108 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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