Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
PJA3406_R1_00001 by Panjit International is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE, 17.6A IDM, 0.048 ohm RDS(on), and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
Median Price
$0.090
Lifecycle Status
Suppliers In-Stock
10
In-Stock Inventory
1k+
Mouser Electronics
1+ parts
$0.300
100+ parts
$0.116
1k+ parts
$0.085
10k+ parts
$0.062
DigiKey
-
TTI Europe
$0.063
Chip1Stop
$0.070
$0.067
Verical
$0.083
$0.077
Ozdisan Elektronik
$0.078
Nova Conductors
$0.105
TME
$0.280
$0.098
$0.059
Maritex
$0.402
$0.092
$0.076
$0.060
Vyrian
Argo Parts USA
$0.102
Netroflash
Continental Prestige Electronics
$0.103
GreenTree Electronics
Perfect Parts
Kepictronics
This material provides good insulation and protection for the FET, ensuring durability and reliability in various operating conditions.
N-channel FETs typically offer better performance in terms of efficiency and switching speed compared to P-channel FETs.
Designed specifically for switching applications, providing efficient handling of power control requirements.
With a breakdown voltage of 30V, this FET can safely operate in low to medium voltage circuits, ensuring protection against voltage spikes.
High pulsed drain current capability allows for handling sudden surges in current, making it suitable for applications with varying load requirements.
With a maximum drain current of 4.4A, this FET can reliably handle continuous current flow in typical circuit conditions.
Low on-resistance helps in reducing power losses and improving overall efficiency in the system where this FET is used.
MOSFET technology provides excellent switching characteristics, low gate drive power, and high input impedance, making it ideal for various power applications.
Power Field Effect Transistors (FET) PJA3406_R1_00001 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Panjit International
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
PJA3406_R1_00001 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PANJIT is a public company founded in May 1986. We are a semi-conductor manufacturer, and have IATF-16949,ESD S20.20,ISO-9001,ISO-14001,ISO-45001 certifications etc.. PANJIT is vertically integrated with IDM design capability, own wafer foundries and state-of-art production lines. With insight observation and core technologies, PANJIT is able to continuously launch low profile products and accurate power rating devices which conforms to the customer needs. PANJIT commits to serve customers with the best service, thus we have established sales offices worldwide. We have sites in North America, Germany, Korea and China which allows us to provide better and prompt service.
BSS123,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
LM555CN
Harris Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Fairchild Semiconductor
MMBF170LT1G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
BSS138BKW,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;
North American Philips Discrete Products Div
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .1 A;
1N4148
Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N2222A
Loras Industries
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
ATMEGA328P-AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 32; Package Code: TQFP; Package Shape: SQUARE;
M39029/58-360
Amphenol
CONNECTOR ACCESSORY; MIL Conformity: YES; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: MALE; Terminal Type: CRIMP; IEC Conformity: NO;
LM317T/NOPB
Texas Instruments
LM317T/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount with three terminals for easy installation.
M85049/85-08W02
Glenair
CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;
OPA2277UA/2K5
OPA2277UA/2K5 by Texas Instruments is a dual operational amplifier with low offset voltage of 100 uV and micropower consumption of 0.004 uA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1 MHz. With a compact rectangular package style, it is suitable for surface mount designs in various electronic systems.
SMBJ18CA
Protek Devices
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
BSS138W-7-F
Multicomp Pro
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
NDT2955
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDS6982AS
Onsemi
FDS6982AS by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 ELEMENTS WITH BUILT-IN DIODE in a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE. With a Max Drain Current of 8.6A and 0.0135 ohm On Resistance, it offers efficient performance up to 150°C.
IRFZ44NSTRR
International Rectifier
IRFZ44NSTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it features 0.0175 ohm Drain-Source On Resistance and 94W Max Power Dissipation in a SMALL OUTLINE package.
IRF7319TRPBF
Infineon Technologies
IRF7319TRPBF by Infineon is a Power FET with N- and P-channel types. It features 2 separate elements with built-in diode, ideal for switching applications. With a max pulsed drain current of 30A and low on-resistance of 0.029 ohm, it operates in enhancement mode for efficient performance.
IRF7425TRPBF-1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;
NX3008NBK,215
NXP Semiconductors
NX3008NBK,215 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.4A and power dissipation of 0.42W. Ideal for applications requiring high efficiency in power management systems due to its single configuration and enhancement mode operation at up to 150°C operating temperature.
IRLML0030TRPBF-1
Infineon's IRLML0030TRPBF-1 is a N-channel Power FET with 30V DS breakdown voltage and 21A IDM. Ideal for applications requiring high power dissipation up to 1.3W, such as in small outline packages where space is limited. Operating in enhancement mode, it offers low 0.027 ohm drain-source resistance for efficient performance.
FDB44N25TM
FDB44N25TM by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 44A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 176A Pulsed Drain Current, and 307W Power Dissipation in a RECTANGULAR package.
BSP149H6327XTSA1
Infineon Technologies' BSP149H6327XTSA1 is a N-CHANNEL Power FET with 200V DS breakdown voltage. It has a max drain current of 0.66A and operates in depletion mode. This transistor, with its small outline package style, is suitable for various applications requiring high power dissipation and temperature resistance up to 150°C.
FQP27P06_SW82127
FQP27P06_SW82127 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 108A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 120W, this transistor has a -55 to 175 °C operating temperature range.
FDMC86102LZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; No. of Terminals: 5; Peak Reflow Temperature (C): 260;
CSD18543Q3A
CSD18543Q3A by Texas Instruments is a N-CHANNEL Power FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 156A IDM, and 0.0156 ohm Drain-Source On Resistance. With METAL-OXIDE SEMICONDUCTOR technology, it operates b/w -55 to 150 °C, making it ideal for high-power switching circuits.
CSD19537Q3T
CSD19537Q3T by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a Max Pulsed Drain Current of 219A, Min DS Breakdown Voltage of 100V, and Max Operating Temperature of 150°C. This SINGLE configuration transistor has a Surface Mount design with METAL-OXIDE SEMICONDUCTOR technology.
FDMS86252L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Case Connection: DRAIN; No. of Elements: 1;
BSC900N20NS3GATMA1
BSC900N20NS3GATMA1 by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 200V and can handle a max pulsed drain current of 61A. This transistor is commonly used for switching applications.
IRFP250NPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Drain Current (ID): 30 A; No. of Terminals: 3;
BSC016N06NSATMA1
Infineon's BSC016N06NSATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max IDM of 400A and EAS of 380mJ, ensuring efficient operation. With a drain-source on resistance of 0.0016 ohm and operating temperature up to 150°C, it offers high performance in a small outline package.
IRF9530
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Case Connection: DRAIN;
IXTK3N250L
Littelfuse
IXTK3N250L by Littelfuse is a N-CHANNEL FET with 2500V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features 8A IDM, 417W Abs Power Dissipation, and operates in ENHANCEMENT MODE. With a max operating temperature of 150°C and -55°C min, it offers reliable performance in various environments.
STP80NF10FP
STMicroelectronics
STP80NF10FP by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage. It has 152A IDM and 350mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.015 ohm Drain-Source On Resistance and can handle up to 40W power dissipation.
2N7000
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
PJA3441_R1_00001
Panjit International
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .088 ohm;
PJA3441-AU_R1_000A1
PJA3441-AU_R1_000A1 by Panjit Int. is a P-CHANNEL FET for SWITCHING apps. Features include 40V DS Breakdown Voltage, 12.4A IDM, and 0.088 ohm RDS(on). Ideal for automotive electronics due to AEC-Q101 compliance and -55 to 150 °C operating range.
PJA3404_R1_00001
PJA3404_R1_00001 by Panjit Int. is a N-CHANNEL FET with 30V DS breakdown voltage, 22A IDM, and 0.03 ohm RDS(on). Ideal for switching applications, it's a single config with built-in diode in small outline package, featuring metal-oxide semiconductor tech and matte tin finish.
PJA3441_R2_00001
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: MATTE TIN; JESD-30 Code: R-PDSO-G3; Package Shape: RECTANGULAR;
PJA3404A_R1_00001
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 40; No. of Terminals: 3;
PJA3463_R1_00001
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;
PJA3433_R1_00001
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Peak Reflow Temperature (C): 260;
PJA3400_R1_00001
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 19.6 A; Maximum Drain Current (ID): 4.9 A;
PJA3403_R1_00001
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 40;
PJA3405_R1_00001
PJA3405_R1_00001 by Panjit International is a P-CHANNEL power FET with a min DS breakdown voltage of 30V. It is used for switching applications and has a max pulsed drain current of 14.4A. The transistor is surface mountable, has a small outline package style, and uses metal-oxide semiconductor technology.
PJA3407_R1_00001
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 30 V; No. of Elements: 1;
PJA3407_R2_00001
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Position: DUAL; Peak Reflow Temperature (C): 260;
PJA3404_R2_00001
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 22 A;
PJA3406_R2_00001
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .048 ohm;
PJA3401_R2_00001
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .072 ohm; No. of Elements: 1;
PJA3404-AU_R1_000A1
PJA3404-AU_R1_000A1 by Panjit Int. is a N-CHANNEL FET for SWITCHING apps. Features include 30V DS Breakdown Voltage, 22A IDM, and 0.03 ohm Drain-Source Resistance. Ideal for ENHANCEMENT MODE operations in automotive (AEC-Q101) & industrial (IEC-61249; MIL-STD-750) sectors.
PJA3404-AU_R2_000A1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Transistor Application: SWITCHING; Maximum Time At Peak Reflow Temperature (s): 40;
PJA3401A_R2_00001
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: .054 ohm;
PJA3405-AU_R1_000A1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PDSO-G3; Peak Reflow Temperature (C): NOT SPECIFIED;
PJA3409E_R1_00001
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; No. of Terminals: 3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved