Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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PJA3441_R2_00001 by Panjit Int. is a P-CHANNEL FET with 40V DS Breakdown Voltage, 12.4A IDM, and 0.088 ohm RDS(on). Ideal for SWITCHING applications due to ENHANCEMENT MODE operation and SINGLE configuration with BUILT-IN DIODE. Features GULL WING terminals in a RECTANGULAR package style for surface mount assembly.
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This material provides durability and protection for the components inside, making the product reliable for various applications.
P-Channel FETs can offer lower resistance and higher efficiency compared to N-Channel FETs, making them suitable for certain circuit designs.
The built-in diode can provide added protection against voltage spikes and reverse currents, enhancing the reliability of the product in switching applications.
Designed specifically for switching applications, this FET offers high performance and efficiency in controlling power flow.
Surface mount technology allows for easy installation on circuit boards, saving space and making it suitable for compact electronics designs.
With a minimum breakdown voltage of 40V, this FET can handle higher voltage levels, making it suitable for a variety of power applications.
The rectangular package shape provides a standardized form factor for easy integration into circuit designs and assemblies.
Enhancement mode FETs are normally off and require a positive voltage to turn on, offering precise control over power flow in switching applications.
With a high maximum pulsed drain current, this FET can handle peak power demands and temporary load spikes without damage.
Having 3 terminals allows for simple connections and control of the FET in various circuit configurations.
The small outline package style saves space on the circuit board and is suitable for applications where size is a constraint.
Metal-oxide semiconductor technology offers high performance and reliability in power switching applications, ensuring stable operation over time.
Silicon is a common and reliable material for transistor elements, providing good electrical characteristics for efficient power control.
Matte tin finish on the terminals ensures good conductivity and solderability, making it easy to install the FET on circuit boards.
With a maximum drain current of 3.1A, this FET can handle moderate power loads efficiently in various applications.
Low drain-source on resistance results in minimal power loss and heat generation, making the FET highly efficient in power switching applications.
Dual terminal position allows for flexible mounting and connection options in circuit layouts, enhancing the versatility of the product.
The maximum time at peak reflow temperature of 40 seconds ensures proper soldering and reliability during assembly processes.
The peak reflow temperature of 260°C ensures proper soldering of the FET on circuit boards without damaging its components.
Power Field Effect Transistors (FET) PJA3441_R2_00001 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Panjit International
Configuration:
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Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
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No. of Terminals:
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Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
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Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
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PJA3441_R2_00001 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Product Change Notification (PDF)
Product Change Notification 2024-01-12 (PDF)
PANJIT is a public company founded in May 1986. We are a semi-conductor manufacturer, and have IATF-16949,ESD S20.20,ISO-9001,ISO-14001,ISO-45001 certifications etc.. PANJIT is vertically integrated with IDM design capability, own wafer foundries and state-of-art production lines. With insight observation and core technologies, PANJIT is able to continuously launch low profile products and accurate power rating devices which conforms to the customer needs. PANJIT commits to serve customers with the best service, thus we have established sales offices worldwide. We have sites in North America, Germany, Korea and China which allows us to provide better and prompt service.
BAV99
Won-top Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Invensys Sensor Systems
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Repetitive Peak Reverse Voltage: 100 V;
1552200168
Molex
WIRE AND CABLE;
LL4148
Weitron Technology
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
Rectron
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
SS14
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Comchip Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
Vishay Intertechnology
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MURS160T3G
Onsemi
MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.
Microsemi
PIC18F4550-I/ML
Microchip Technology
The Microchip Technology PIC18F4550-I/ML is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this chip offers efficient performance in compact designs.
General Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Kec
Crimson Semiconductor
FSMLF327
Fox Electronics
FSMLF327 by Fox Electronics is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing such as communication systems, industrial automation, and consumer electronics. Operating temperature range from -40 to 85 °C.
1N4148WS
Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.
National Semiconductor
CRCW040210K0FKED
Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.
NE555D
Philips Semiconductors
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
IRFR024NTRPBF
Infineon Technologies
IRFR024NTRPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 71mJ EAS, and 0.075ohm RDS(ON). With a max power dissipation of 45W and operating temperature of 175°C, it's suitable for high-power electronic systems.
IRF7343TRPBF
IRF7343TRPBF by Infineon is a Power FET with N-Channel and P-Channel types. It has 2 separate elements with built-in diode for switching applications. Features include 55V DS breakdown voltage, 38A max pulsed drain current, and 0.05 ohm max drain-source resistance. Ideal for enhancement mode operation in various electronic devices.
IRFP4668PBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; No. of Elements: 1; Maximum Drain Current (ID): 130 A;
FDD4243-G
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
IRF540NPBF
IRF540NPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 33A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 185mJ Avalanche Energy Rating, and operates in ENHANCEMENT MODE.
DMN6068SE-13
DMN6068SE-13 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, 20.8A max pulsed drain current, and 0.068 ohm max drain-source resistance. Suitable for enhancement mode operation in small outline packages at up to 150°C operating temperature.
SI4532DY
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Pulsed Drain Current (IDM): 20 A; Package Body Material: PLASTIC/EPOXY;
IRFB4115PBF
IRFB4115PBF by Infineon is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 420A and EAS of 830mJ, making it suitable for high-power operations. With an operating temperature up to 175°C and 0.011 ohm RDS(on), this transistor offers reliable performance in various industrial settings.
BSZ160N10NS3GATMA1
Infineon Technologies' BSZ160N10NS3GATMA1 is a power FET with N-channel configuration and a built-in diode. It is suitable for switching applications, offering a min DS breakdown voltage of 100V and max pulsed drain current of 160A. Its small outline package style and high operating temperature make it ideal for various electronic devices.
JANTX2N6796U
International Rectifier Hirel Products
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 100 V;
IRF840SPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; No. of Elements: 1;
IRFS3306TRLPBF
IRFS3306TRLPBF by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 620A IDM, 184mJ EAS, and 0.0042 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 230W at 175°C.
DMP3099L-7
DMP3099L-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage and 3.8A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.065 ohm. Suitable for surface mount designs with small outline package style.
SI2319CDS-T1-BE3
SI2319CDS-T1-BE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 20A IDM, and 0.077 ohm Drain-Source On Resistance. With ENHANCEMENT MODE operation, this MOSFET has a max power dissipation of 2.5W in a SMALL OUTLINE package suitable for surface mount assemblies.
IRF640
Comset Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
IRFR120NTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Terminal Position: SINGLE; Maximum Time At Peak Reflow Temperature (s): 30;
IRF9310TRPBF
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Qualification: Not Qualified; Maximum Drain Current (Abs) (ID): 20 A;
Unitrode
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
FDS6680A
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
NTMFS5C670NLT1G
NTMFS5C670NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 60V DS breakdown voltage, and 440A pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as power supplies and motor control systems.
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PJA3441_R1_00001
Panjit International
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .088 ohm;
PJA3441-AU_R1_000A1
PJA3441-AU_R1_000A1 by Panjit Int. is a P-CHANNEL FET for SWITCHING apps. Features include 40V DS Breakdown Voltage, 12.4A IDM, and 0.088 ohm RDS(on). Ideal for automotive electronics due to AEC-Q101 compliance and -55 to 150 °C operating range.
PJA3404_R1_00001
PJA3404_R1_00001 by Panjit Int. is a N-CHANNEL FET with 30V DS breakdown voltage, 22A IDM, and 0.03 ohm RDS(on). Ideal for switching applications, it's a single config with built-in diode in small outline package, featuring metal-oxide semiconductor tech and matte tin finish.
PJA3406_R1_00001
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
PJA3404A_R1_00001
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 40; No. of Terminals: 3;
PJA3463_R1_00001
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;
PJA3433_R1_00001
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Peak Reflow Temperature (C): 260;
PJA3448_R1_00001
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
PJA3448_R2_00001
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE;
PJA3440_R1_00001
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (ID): 4.3 A; No. of Elements: 1;
PJA3440_R2_00001
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 17.2 A; Maximum Drain Current (ID): 4.3 A; Transistor Element Material: SILICON;
PJA3449_R1_00001
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 40 V;
PJA3449_R2_00001
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 40; Package Shape: RECTANGULAR;
PJA3440-AU_R1_000A1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 40 V;
PJA3446-AU_R1_000A1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Reference Standard: AEC-Q101; Transistor Element Material: SILICON;
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