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PJA3440-AU_R1_000A1

Panjit International

PJA3440-AU_R1_000A1 by Panjit International

PJA3440-AU_R1_000A1 by Panjit Int. is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 17.2A IDM, 0.042 ohm RDS(on), and -55 to 150°C operating temp range. Suitable for automotive (AEC-Q101) and industrial electronics due to its ENHANCEMENT MODE operation and SMALL OUTLINE package style.

Median Price

$0.170

Lifecycle Status

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5

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1k+

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DigiKey

USA . 88 parts In-Stock

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100+ parts

$0.161

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$0.106

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$0.076

88

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$0.161

$0.106

$0.076

TTI

USA . 87,000 parts In-Stock

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$0.060

87,000

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$0.060

Avnet

USA . 15,000 parts In-Stock

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$0.200

15,000

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Verical

USA . 1,115 parts In-Stock

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$0.141

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1,115

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TME

Poland . 1,115 parts In-Stock

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$0.390

100+ parts

$0.139

1k+ parts

$0.100

10k+ parts

$0.098

1,115

$0.390

$0.139

$0.100

$0.098

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Overview

Discover the power and efficiency of Panjit International's PJA3440-AU_R1_000A1 Power Field Effect Transistor. This high-quality N-CHANNEL transistor offers a single configuration with a built-in diode for seamless switching applications. With a maximum pulsed drain current of 17.2 A and a minimum DS breakdown voltage of 40 V, this FET is designed for optimal performance. Whether you're looking to enhance your electronic devices or improve energy efficiency, this transistor is the perfect solution. Upgrade your technology with Panjit International today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the internal components of the transistor, ensuring reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high efficiency and fast switching speeds, making them ideal for switching applications where performance is key.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for better control of current flow and protection against reverse voltage, improving the overall functionality of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for efficient and reliable performance in controlling electrical currents.

Surface Mount: YES

Being surface mountable, this transistor offers easy integration onto circuit boards, saving space and simplifying the assembly process.

Minimum DS Breakdown Voltage: 40 V

The minimum breakdown voltage of 40V ensures that the transistor can handle high voltage levels without experiencing failure, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on circuit boards and facilitates cooling, contributing to the overall performance and longevity of the transistor.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and easy soldering during installation, ensuring a reliable electrical connection for optimal performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and low on-resistance, leading to improved efficiency and reduced power consumption in switching applications.

Maximum Pulsed Drain Current (IDM): 17.2 A

The high maximum pulsed drain current capacity of 17.2A allows the transistor to handle peak power demands without overheating, ensuring consistent performance under demanding conditions.

No. of Terminals: 3

With three terminals, this transistor provides the necessary connections for power input, output, and control signals, enabling precise switching control in circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board and enhances thermal management, making it suitable for compact electronic devices with limited space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high-speed switching capabilities, low gate capacitance, and stable performance, making it a reliable choice for switching applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, ensuring reliable performance in industrial and automotive applications.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties, high temperature tolerance, and reliability, making it a common choice for semiconductor components like transistors.

Minimum Operating Temperature: -55 °C

The wide minimum operating temperature range of -55°C ensures the transistor can operate in extreme cold conditions, making it suitable for a variety of applications in diverse environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers good solderability and conductivity, enhancing the reliability and longevity of the transistor connections in electronic circuits.

Maximum Drain Current (ID): 4.3 A

The maximum drain current capacity of 4.3A allows the transistor to handle continuous power loads efficiently, ensuring stable operation in various applications.

Maximum Drain-Source On Resistance: 0.042 ohm

The low drain-source on-resistance of 0.042 ohms minimizes power loss and heat generation, improving the overall efficiency and performance of the transistor in switching operations.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit board layout and connections, allowing for versatile integration in different electronic designs.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time at peak reflow temperature of 40 seconds ensures proper soldering and component placement during assembly, preventing overheating and potential damage to the transistor.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for reliable soldering and thermal bonding, ensuring secure connections and stable electrical performance in the transistor.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 automotive standard ensures that the transistor meets rigorous quality and reliability requirements for use in automotive electronic systems, providing assurance of performance and durability.

Technical Specifications

Power Field Effect Transistors (FET) PJA3440-AU_R1_000A1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Panjit International

Specs

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

4.3 A

Maximum Drain-Source On Resistance:

.042 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

17.2 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PJA3440-AU_R1_000A1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Panjit International

PANJIT is a public company founded in May 1986. We are a semi-conductor manufacturer, and have IATF-16949,ESD S20.20,ISO-9001,ISO-14001,ISO-45001 certifications etc.. PANJIT is vertically integrated with IDM design capability, own wafer foundries and state-of-art production lines. With insight observation and core technologies, PANJIT is able to continuously launch low profile products and accurate power rating devices which conforms to the customer needs. PANJIT commits to serve customers with the best service, thus we have established sales offices worldwide. We have sites in North America, Germany, Korea and China which allows us to provide better and prompt service.

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