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TCC-106B-RT

Onsemi

TCC-106B-RT by Onsemi

TCC-106B-RT by Onsemi is a Telecom Interface IC with 20 terminals in a grid array package. It operates b/w -30 °C to 85°C, with a nominal voltage of 3.3V. This IC is designed for telecom circuits requiring very thin profile and fine pitch components.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,240 parts In-Stock

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Digiode

USA . 642 parts In-Stock

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642

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Problanco Electronics

Mexico . 8,165 parts In-Stock

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8,165

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SupplyDigital Components

Austria . 7,657 parts In-Stock

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Kulean Microsystems

USA . 2,847 parts In-Stock

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TANS Electronics

Latvia . 986 parts In-Stock

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986

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Corohmni

South Africa . 420 parts In-Stock

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Corphita

USA . 141 parts In-Stock

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UHIMA Technologies

Türkiye . 127 parts In-Stock

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Overview

Enhance your telecom interface system with the TCC-106B-RT by Onsemi, a top-tier manufacturer in the industry. This versatile product offers seamless integration and high performance, ensuring reliable connectivity and optimal functionality. Whether you're looking to upgrade your telecommunications equipment or enhance your network infrastructure, this innovative solution delivers unparalleled value and efficiency. Trust Onsemi for cutting-edge technology and superior quality that meets your business needs. Elevate your communication systems with the TCC-106B-RT today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides good insulation and protection for the internal components of the IC, enhancing its durability and reliability.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving valuable time and effort during manufacturing.

No. of Terminals: 20

Having 20 terminals provides versatile connectivity options and allows for different interfaces to be supported, increasing the product's flexibility.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this IC can withstand harsh environmental conditions and maintain stable performance.

Nominal Supply Voltage: 3.3 V

Operating at a nominal supply voltage of 3.3V ensures compatibility with standard power sources, making integration easier and more convenient.

Technical Specifications

Other Function Telecom Interface ICs TCC-106B-RT attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Onsemi

Specs

JESD-30 Code:

R-PBGA-B20

Length:

2.58 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

.65 mm

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Width:

2.23 mm

Trade Compliance

TCC-106B-RT Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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