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SZSL12T3G

Onsemi

SZSL12T3G by Onsemi

SZSL12T3G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 300W peak power dissipation, 14.4V breakdown voltage, and 1uA max reverse current. Ideal for transient suppression in automotive electronics, meeting AEC-Q100 and IEC-61000 standards.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,264 parts In-Stock

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2,264

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Digiode

USA . 65 parts In-Stock

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65

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 8,012 parts In-Stock

1+ parts

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8,012

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Problanco Electronics

Mexico . 5,665 parts In-Stock

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5,665

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SupplyDigital Components

Austria . 5,445 parts In-Stock

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5,445

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UHIMA Technologies

Türkiye . 740 parts In-Stock

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740

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Corphita

USA . 660 parts In-Stock

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660

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Kulean Microsystems

USA . 275 parts In-Stock

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275

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Corohmni

South Africa . 267 parts In-Stock

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267

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Overview

Enhance your electronics with the SZSL12T3G by Onsemi, a top-of-the-line transient suppression device designed to protect your valuable equipment from voltage spikes and surges. Manufactured by Onsemi, a trusted industry leader known for their superior quality products, this device offers unparalleled reliability and performance. Ideal for a wide range of applications, this single configuration device is easy to install and provides maximum protection with its advanced technology and high-quality materials. Don't compromise on safety - choose the SZSL12T3G for peace of mind and quality assurance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and protection for the internal components of the transient suppression device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

High power dissipation capability allows the device to handle sudden surges or spikes effectively, protecting the connected components from damage.

Nominal Breakdown Voltage: 14.4 V

The specific breakdown voltage ensures reliable protection against overvoltage conditions within a narrow voltage range, providing targeted protection for sensitive electronics.

Surface Mount: YES

Being surface mountable makes installation easier and more convenient, especially in compact electronic devices where space is limited.

Technology: AVALANCHE

The avalanche technology used in this transient suppression device allows for rapid response and efficient clamping of voltage spikes, ensuring swift protection for connected devices.

Technical Specifications

Transient Suppression Devices SZSL12T3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

15.5 V

Minimum Breakdown Voltage:

13.3 V

Nominal Breakdown Voltage:

14.4 V

Maximum Clamping Voltage:

24 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q100; IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

12 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

12 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

SZSL12T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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