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SZSL15T3G

Onsemi

SZSL15T3G by Onsemi

SZSL15T3G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 17.6V breakdown voltage, 300W peak reverse power dissipation, and 1uA max reverse current. Ideal for transient suppression in automotive electronics, meeting AEC-Q100 and IEC-61000 standards.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,654 parts In-Stock

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Digiode

USA . 1,157 parts In-Stock

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Problanco Electronics

Mexico . 8,274 parts In-Stock

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TANS Electronics

Latvia . 6,890 parts In-Stock

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Corphita

USA . 1,744 parts In-Stock

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SupplyDigital Components

Austria . 1,439 parts In-Stock

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Kulean Microsystems

USA . 937 parts In-Stock

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UHIMA Technologies

Türkiye . 543 parts In-Stock

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Corohmni

South Africa . 229 parts In-Stock

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Overview

Elevate your electronic designs with the SZSL15T3G by Onsemi, a top-notch transient suppression device that guarantees superior quality and reliability. Manufactured by Onsemi, a trusted industry leader, this product is perfect for a wide range of applications. With its advanced technology and high-performance capabilities, the SZSL15T3G offers unmatched value, benefits, and advantages to customers seeking top-tier protection for their electronics. Trust Onsemi to deliver excellence with the SZSL15T3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the internal components, making the product reliable for long-term use.

Config: SINGLE

The single configuration simplifies installation and maintenance of the transient suppression device, making it easy to use in various applications.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, saving space and making the product convenient for compact designs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

With a high maximum non-repetitive peak reverse power dissipation, this device can effectively handle sudden voltage spikes and protect connected electronics from damage.

Nominal Breakdown Voltage: 17.6 V

The nominal breakdown voltage ensures reliable protection against voltage surges, maintaining the stability of the connected circuitry.

Maximum Reverse Current: 1 uA

The low maximum reverse current minimizes power loss and ensures efficient operation of the transient suppression device.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and mounting onto circuit boards, optimizing space utilization in electronic devices.

Reverse Test Voltage: 15 V

The reverse test voltage specification ensures that the device can effectively handle reverse voltage conditions without compromising its performance.

No. of Terminals: 3

Having three terminals provides versatility in connectivity options, allowing for flexible integration into different circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and enables the device to be used in compact electronic designs without sacrificing functionality.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range ensures the device remains stable and reliable even in demanding environmental conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature range allows the device to function effectively in cold environments without compromising performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in connecting the device within a circuit, accommodating various wiring configurations for ease of installation.

Maximum Power Dissipation: 0.225 W

The low maximum power dissipation ensures efficient energy usage and prevents overheating of the device during operation.

Minimum Breakdown Voltage: 16.7 V

The minimum breakdown voltage specification guarantees reliable protection against overvoltage conditions, safeguarding connected electronics from potential damage.

Maximum Breakdown Voltage: 18.5 V

The maximum breakdown voltage ensures that the device can handle higher voltage surges while still providing effective transient suppression protection.

Reference Standard: AEC-Q100; IEC-61000-4-2, 4-4, 4-5

Compliance with industry standards such as AEC-Q100 and IEC-61000-4 series ensures the quality and reliability of the product, meeting regulatory requirements for electronic components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a trans voltage suppressor diode type ensures efficient voltage clamping and transient suppression, protecting connected devices from voltage spikes and surges.

Technology: AVALANCHE

The avalanche technology used in the device allows for quick response to transient events, effectively suppressing voltage spikes and providing reliable protection for electronic circuits.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering onto circuit boards, ensuring secure and reliable connections for optimal performance.

Maximum Repetitive Peak Reverse Voltage: 15 V

The maximum repetitive peak reverse voltage specification guarantees continuous protection against reverse voltage conditions, ensuring the device remains reliable over time.

Polarity: UNIDIRECTIONAL

The unidirectional polarity design ensures that voltage surges are directed away from the protected equipment, preventing damage and maintaining the integrity of the circuit.

Maximum Clamping Voltage: 30 V

The maximum clamping voltage specification limits the voltage level that the device allows to pass through, protecting connected electronics by suppressing excessive voltage spikes.

Diode Element Material: SILICON

The use of silicon as the diode element material provides high-performance transient suppression capabilities, ensuring effective voltage clamping and protection for electronic devices.

Technical Specifications

Transient Suppression Devices SZSL15T3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

18.5 V

Minimum Breakdown Voltage:

16.7 V

Nominal Breakdown Voltage:

17.6 V

Maximum Clamping Voltage:

30 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q100; IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

15 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

SZSL15T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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