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SZSL12T1G

Onsemi

SZSL12T1G by Onsemi

SZSL12T1G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 300W power dissipation, 14.4V breakdown voltage, and 1uA max reverse current. Ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and -55 to 150 °C operating temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,177 parts In-Stock

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Vyrian

USA . 1,573 parts In-Stock

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Kepictronics

USA . 74,900 parts In-Stock

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SupplyDigital Components

Austria . 4,982 parts In-Stock

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Kulean Microsystems

USA . 4,943 parts In-Stock

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TANS Electronics

Latvia . 1,743 parts In-Stock

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Problanco Electronics

Mexico . 1,464 parts In-Stock

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UHIMA Technologies

Türkiye . 969 parts In-Stock

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Corohmni

South Africa . 261 parts In-Stock

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Corphita

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Overview

Discover the superior protection and reliability of the SZSL12T1G by Onsemi, a top-of-the-line transient suppression device designed to safeguard your electronics. Manufactured by industry leader Onsemi, this product offers unparalleled quality and performance. Perfect for a wide range of applications, this device ensures peace of mind with its exceptional value and benefits. Trust Onsemi's expertise and invest in the SZSL12T1G for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy package body material provides durability and protection for the device, making it suitable for a wide range of applications.

Config: SINGLE

The single configuration simplifies installation and maintenance of the device, making it user-friendly.

Surface Mount: YES

The surface mount capability allows for easy integration in compact electronic designs, saving space and improving overall efficiency.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

The high peak power dissipation rating ensures robust protection against transient voltage spikes, safeguarding connected equipment.

Nominal Breakdown Voltage: 14.4 V

The nominal breakdown voltage of 14.4 V indicates effective voltage regulation and overvoltage protection, preventing damage to sensitive components.

Maximum Reverse Current: 1 uA

The low reverse current helps in maintaining efficiency and reliability of the device by minimizing power losses.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into various circuit designs, enhancing versatility.

Reverse Test Voltage: 12 V

The reverse test voltage of 12 V ensures effective testing and validation of the device's performance under reverse polarity conditions.

No. of Terminals: 3

The three terminals provide easy connectivity and secure attachment to external circuits, promoting stable operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and facilitates compact circuit board layouts, ideal for applications with limited space constraints.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures reliable performance in demanding environmental conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C enables operation in extreme cold environments, enhancing versatility.

Terminal Position: DUAL

The dual terminal position allows for flexible installation and connection options, accommodating various circuit configurations.

Maximum Power Dissipation: 0.225 W

The low maximum power dissipation helps in maintaining energy efficiency and reliability of the device during operation.

Minimum Breakdown Voltage: 13.3 V

The minimum breakdown voltage of 13.3 V ensures reliable protection against transient voltage spikes, safeguarding connected equipment.

Maximum Breakdown Voltage: 15.5 V

The high maximum breakdown voltage of 15.5 V provides an additional safety margin against overvoltage events, enhancing protection capabilities.

Reference Standard: AEC-Q101; IEC-61000-4-2, 4-4, 4-5

Compliance with industry standards such as AEC-Q101 and IEC-61000 ensures quality, reliability, and performance consistency of the device.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of TRANS VOLTAGE SUPPRESSOR DIODE ensures efficient and effective suppression of transient voltage spikes, protecting connected devices.

Technology: AVALANCHE

The AVALANCHE technology offers high-level performance and reliability in transient voltage suppression, ensuring optimal protection for critical electronics.

Terminal Form: GULL WING

The GULL WING terminal form provides secure connections and facilitates easy soldering during installation, ensuring reliable operation.

Maximum Repetitive Peak Reverse Voltage: 12 V

The maximum repetitive peak reverse voltage of 12 V ensures continuous protection against transient voltage spikes in the circuit.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the device only conducts in one direction, providing effective protection against transient voltage events.

Maximum Clamping Voltage: 24 V

The maximum clamping voltage of 24 V indicates the maximum voltage level that the device will clamp transient voltage spikes to, ensuring protection of downstream devices.

Diode Element Material: SILICON

The use of silicon as the diode element material provides high efficiency and reliability in suppressing transient voltage spikes, offering long-term protection for connected devices.

Technical Specifications

Transient Suppression Devices SZSL12T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

15.5 V

Minimum Breakdown Voltage:

13.3 V

Nominal Breakdown Voltage:

14.4 V

Maximum Clamping Voltage:

24 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

12 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

12 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

SZSL12T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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