Loading...

SZSL24T3G

Onsemi

SZSL24T3G by Onsemi

SZSL24T3G by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 27.85V breakdown voltage and 300W peak reverse power dissipation. Ideal for transient suppression applications, it operates b/w -55 to 150 °C and complies with AEC-Q100, IEC-61000-4-2, 4-4, 4-5 standards.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,638 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,638

-

-

-

-

Digiode

USA . 932 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

932

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 7,727 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,727

-

-

-

-

SupplyDigital Components

Austria . 7,694 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,694

-

-

-

-

Problanco Electronics

Mexico . 5,174 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,174

-

-

-

-

TANS Electronics

Latvia . 3,890 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,890

-

-

-

-

Corphita

USA . 614 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

614

-

-

-

-

Corohmni

South Africa . 79 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

79

-

-

-

-

UHIMA Technologies

Türkiye . 24 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24

-

-

-

-

Overview

Enhance the robustness of your electronic devices with the SZSL24T3G Transient Suppression Device by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality products that provide reliable protection against voltage spikes and surges, ensuring the longevity of your equipment. Ideal for a wide range of applications, this device offers peace of mind and superior performance at a competitive price point. Upgrade your electronics with the SZSL24T3G and experience the difference in quality and durability today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and reliability, ensuring a long lifespan for the product.

Config: SINGLE

Single configuration simplifies installation and maintenance, reducing complexity in the system.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

High power dissipation capability ensures the device can handle transient surges effectively, protecting the circuit from damage.

Nominal Breakdown Voltage: 27.85 V

Precise breakdown voltage ensures reliable protection against overvoltage events.

Maximum Reverse Current: 1 uA

Low reverse current minimizes power consumption and heat dissipation, improving energy efficiency.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and orientation on the circuit board for efficient use of space.

Reverse Test Voltage: 24 V

Reverse test voltage within safe limits ensures the device can effectively suppress reverse voltage transients.

No. of Terminals: 3

Having 3 terminals allows for easy connectivity and ensures proper functioning within the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and enables compact designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range ensures the device can withstand harsh environmental conditions.

Minimum Operating Temperature: -55 °C

Wide operating temperature range allows the device to function reliably in both extreme cold and hot temperatures.

Terminal Position: DUAL

Dual terminal position enhances stability and secure connection within the circuit.

Maximum Power Dissipation: 0.225 W

Efficient power dissipation helps in maintaining the operational temperature of the device within safe limits.

Minimum Breakdown Voltage: 26.7 V

Having a minimum breakdown voltage ensures protection against overvoltage events across a wide range of voltage levels.

Maximum Breakdown Voltage: 29 V

High maximum breakdown voltage provides a safety margin for protection against voltage spikes.

Reference Standard: AEC-Q100; IEC-61000-4-2, 4-4, 4-5

Compliance with industry standards ensures the device meets quality and performance requirements for various applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type designed for transient voltage suppression ensures effective protection against voltage spikes and surges.

Technology: AVALANCHE

Avalanche technology allows for quick response to transient events, providing rapid suppression of voltage spikes.

Terminal Form: GULL WING

Gull wing terminal form ensures reliable solder connections and mechanical strength in the circuit.

Maximum Repetitive Peak Reverse Voltage: 24 V

Having a maximum repetitive peak reverse voltage ensures continuous protection against reverse polarity in the circuit.

Polarity: UNIDIRECTIONAL

Unidirectional polarity allows the device to suppress voltage spikes in one direction, providing targeted protection.

Maximum Clamping Voltage: 55 V

Maximum clamping voltage determines the level at which the device will limit transient voltage, ensuring protection of downstream components.

Diode Element Material: SILICON

Silicon diode element material offers high performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices SZSL24T3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

29 V

Minimum Breakdown Voltage:

26.7 V

Nominal Breakdown Voltage:

27.85 V

Maximum Clamping Voltage:

55 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Reference Standard:

AEC-Q100; IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

24 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

24 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

SZSL24T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 7