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SZNZ8F4V3SMX2WT5G

Onsemi

SZNZ8F4V3SMX2WT5G by Onsemi

SZNZ8F4V3SMX2WT5G by Onsemi is a Zener diode with a max reverse current of 5 uA and working test current of 5 mA. Its package style is small outline, making it suitable for applications requiring precise voltage regulation in compact spaces. With a nominal reference voltage of 4.3 V and max power dissipation of 0.25 W, this diode is ideal for automotive electronics and industrial control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,742 parts In-Stock

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Digiode

USA . 2,241 parts In-Stock

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AZTECH Wire

Italy . 575 parts In-Stock

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$15.830

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Problanco Electronics

Mexico . 5,648 parts In-Stock

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Kulean Microsystems

USA . 2,366 parts In-Stock

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Corphita

USA . 739 parts In-Stock

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UHIMA Technologies

Türkiye . 695 parts In-Stock

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695

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TANS Electronics

Latvia . 341 parts In-Stock

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SupplyDigital Components

Austria . 186 parts In-Stock

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Corohmni

South Africa . 147 parts In-Stock

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Overview

Elevate your electronic designs with the SZNZ8F4V3SMX2WT5G Zener Diode by Onsemi. Made with precision and expertise, this high-quality component guarantees reliable performance in a variety of applications. From voltage regulation to protection circuits, this diode offers unparalleled value and benefits for customers seeking efficiency and durability. Trust Onsemi's reputation for excellence and choose the SZNZ8F4V3SMX2WT5G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and helps in protecting the diode from external environmental factors.

Working Test Current: 5 mA

The 5 mA working test current ensures that the diode operates efficiently within the specified current range.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards.

Maximum Reverse Current: 5 uA

The low maximum reverse current ensures minimal power loss and efficient performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows for reliable performance in a wide range of environmental conditions.

Technical Specifications

Zener Diodes SZNZ8F4V3SMX2WT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

1000 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

4.3 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

3.02 %

Working Test Current:

5 mA

Trade Compliance

SZNZ8F4V3SMX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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