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SZNZ8F3V6MX2WT5G

Onsemi

SZNZ8F3V6MX2WT5G by Onsemi

SZNZ8F3V6MX2WT5G by Onsemi is a Zener diode with 3.6V nominal reference voltage, suitable for automotive applications due to AEC-Q101 standard compliance. It has a max power dissipation of 0.25W, operating temperature range from -65 °C to 150°C, and forward voltage of 0.9V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,867 parts In-Stock

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Digiode

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Component Stockers USA

USA . 245,142 parts In-Stock

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$0.420

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AZTECH Wire

Italy . 256 parts In-Stock

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$19.440

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TANS Electronics

Latvia . 6,797 parts In-Stock

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Problanco Electronics

Mexico . 3,623 parts In-Stock

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SupplyDigital Components

Austria . 2,541 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Corphita

USA . 2,266 parts In-Stock

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UHIMA Technologies

Türkiye . 536 parts In-Stock

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Kulean Microsystems

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Corohmni

South Africa . 67 parts In-Stock

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Overview

Discover the superior quality and reliability of the SZNZ8F3V6MX2WT5G Zener Diode by Onsemi. Designed for a wide range of applications, this single-configured diode offers a maximum reverse voltage of 1 V and a maximum dynamic impedance of 100 ohms. With a small outline package style and nickel palladium gold terminal finish, this diode is perfect for high-temperature environments, meeting AEC-Q101 standards. Trust Onsemi for cutting-edge technology and unmatched performance. Elevate your projects with the SZNZ8F3V6MX2WT5G Zener Diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diode, ensuring a longer lifespan.

Working Test Current: 5 mA

With a working test current of 5 mA, this zener diode is suitable for a wide range of applications and circuits.

Maximum Reverse Current: 10 uA

Low maximum reverse current of 10 uA indicates high efficiency and reliability in preventing current flow in the reverse direction.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C allows for usage in various environmental conditions without risking damage to the diode.

Nominal Reference Voltage: 3.6 V

A stable nominal reference voltage of 3.6V ensures consistent performance and accuracy in voltage regulation applications.

Technical Specifications

Zener Diodes SZNZ8F3V6MX2WT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

1000 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

3.6 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

6.94 %

Working Test Current:

5 mA

Trade Compliance

SZNZ8F3V6MX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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