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SZNZ8F20VMX2WT5G

Onsemi

SZNZ8F20VMX2WT5G by Onsemi

SZNZ8F20VMX2WT5G by Onsemi is a Zener diode with 20V nominal reference voltage, 5% max voltage tolerance, and 100 ohm max knee impedance. It is ideal for applications requiring precise voltage regulation in automotive electronics due to AEC-Q101 compliance and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Flip Electronics

USA . 144,000 parts In-Stock

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Vyrian

USA . 7,970 parts In-Stock

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Digiode

USA . 2,418 parts In-Stock

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Component Stockers USA

USA . 90,371 parts In-Stock

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AZTECH Wire

Italy . 196 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,809 parts In-Stock

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SupplyDigital Components

Austria . 7,491 parts In-Stock

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Problanco Electronics

Mexico . 4,448 parts In-Stock

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TANS Electronics

Latvia . 3,676 parts In-Stock

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Kulean Microsystems

USA . 1,099 parts In-Stock

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Corphita

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Corohmni

South Africa . 79 parts In-Stock

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UHIMA Technologies

Türkiye . 14 parts In-Stock

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Overview

Elevate your electronic designs with the SZNZ8F20VMX2WT5G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality Zener Diodes that ensure reliable performance and precision. These diodes are versatile and can be used in a wide range of applications, offering customers exceptional value and benefits. Trust Onsemi's expertise to provide you with cutting-edge technology that meets your needs and exceeds your expectations. Experience the advantages of using the SZNZ8F20VMX2WT5G in your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the diode lightweight and durable, ensuring longevity and easy handling.

Working Test Current: 5 mA

The low working test current of 5 mA indicates the diode operates efficiently even at lower current levels, making it suitable for a wide range of applications.

Maximum Reverse Current: 0.1 uA

The low maximum reverse current of 0.1 uA ensures minimal power loss and leakage, improving overall efficiency and performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, the diode can withstand elevated temperatures without compromising its functionality.

Maximum Power Dissipation: 0.25 W

The diode's maximum power dissipation of 0.25W indicates its ability to handle higher power loads without overheating or failing, ensuring reliability in demanding applications.

Technical Specifications

Zener Diodes SZNZ8F20VMX2WT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

55 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

100 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

20 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

15.4 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

SZNZ8F20VMX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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