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SZ1SMB5939BT3G-VF01

Onsemi

SZ1SMB5939BT3G-VF01 by Onsemi

SZ1SMB5939BT3G-VF01 by Onsemi is a Zener diode with 39V nominal reference voltage, 29.7V reverse test voltage, and 1uA max reverse current. It is ideal for applications requiring precise voltage regulation in automotive electronics due to its AEC-Q101 reference standard compliance.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,728 parts In-Stock

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Digiode

USA . 1,212 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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Ampacity Inc.

Singapore . 614 parts In-Stock

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$3.010

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AZTECH Wire

Italy . 443 parts In-Stock

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$15.652

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Component Stockers USA

USA . 697 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 23,200 parts In-Stock

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Problanco Electronics

Mexico . 8,255 parts In-Stock

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SupplyDigital Components

Austria . 7,703 parts In-Stock

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TANS Electronics

Latvia . 6,242 parts In-Stock

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Continental Prestige Electronics

USA . 5,206 parts In-Stock

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Kulean Microsystems

USA . 4,334 parts In-Stock

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Argo Parts USA

USA . 1,842 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 927 parts In-Stock

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Corohmni

South Africa . 137 parts In-Stock

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Bastille Electronics

Australia . 78 parts In-Stock

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Overview

Unlock the power of reliable voltage regulation with the SZ1SMB5939BT3G-VF01 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in their Zener Diodes. Ideal for a wide range of applications, this product offers customers the value of stability and precision in voltage control. Say goodbye to fluctuating voltages and hello to a smoother electrical system with the SZ1SMB5939BT3G-VF01.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Working Test Current: 9.6 mA

This optimal working test current ensures stable and reliable performance of the diode.

Surface Mount: YES

Ease of installation and space-saving design make this diode suitable for compact electronic devices.

Maximum Reverse Current: 1 uA

Low reverse current minimizes power loss and improves energy efficiency.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environments and applications.

Maximum Power Dissipation: 0.55 W

High power dissipation capability ensures reliable performance under heavy loads.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and electrical conductivity for secure connections.

Technology: ZENER

Zener technology offers precise voltage regulation and protection against voltage spikes, making it ideal for various circuit protection applications.

Technical Specifications

Zener Diodes SZ1SMB5939BT3G-VF01 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

45 ohm

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Maximum Knee Impedance:

900 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

39 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

29.7 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

9.6 mA

Trade Compliance

SZ1SMB5939BT3G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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