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BZV55-C5V6,115

NXP Semiconductors

BZV55-C5V6,115 by NXP Semiconductors

NXP Semiconductors' BZV55-C5V6,115 is a Zener diode with 5.6V nominal reference voltage and 1uA max reverse current. It operates b/w -65 to 200 °C and has a max power dissipation of 0.4W. Ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

$0.052

Lifecycle Status

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39

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1k+

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Chip1Stop

Japan . 8,659 parts In-Stock

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Mouser Electronics

USA . 20,473 parts In-Stock

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Rochester

USA . 6,830,700 parts In-Stock

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Verical

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Elektronika Sales Private Limited

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Element14

Singapore . 171,498 parts In-Stock

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DigiKey

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TTI

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Newark

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Farnell

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UK . 8,700 parts In-Stock

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Bürklin Elektronik

Germany . 7,300 parts In-Stock

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Digiode

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Nova Conductors

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Poland . 325 parts In-Stock

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IBS Electronics

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NAC Semi

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Semicontronic

India . 5,231,246 parts In-Stock

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Corphita

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Aztec Data Supply Inc.

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Ampacity Inc.

Singapore . 1,047,498 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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Component Stockers USA

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Continental Prestige Electronics

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Glotronic Ltd.

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Robosynatics

Brazil . 900 parts In-Stock

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Lucentia Tech

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Metaverse IC Inc.

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Overview

Discover the superior quality and reliability of the NXP Semiconductors BZV55-C5V6,115 Zener Diode. Perfect for a variety of applications, this high-performance diode offers customers unmatched value and benefits. With a maximum reverse current of 1 uA and a nominal reference voltage of 5.6 V, this diode ensures optimal performance and efficiency. Trust NXP Semiconductors to provide top-notch products that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: GLASS

The glass package body material provides durability and protection for the Zener diode, ensuring long-term reliability.

Working Test Current: 5 mA

The 5 mA working test current allows for stable and consistent performance of the Zener diode in various circuit applications.

Maximum Reverse Current: 1 uA

The low maximum reverse current of 1 uA indicates minimal leakage current, enhancing the efficiency and accuracy of the Zener diode.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature of 200 °C, this Zener diode can withstand extreme environmental conditions, making it suitable for a wide range of applications.

Maximum Voltage Tolerance: 5 %

The 5% maximum voltage tolerance ensures precise voltage regulation, making this Zener diode a reliable choice for voltage stabilization in electronic circuits.

Technical Specifications

Zener Diodes BZV55-C5V6,115 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

40 ohm

JESD-30 Code:

O-LELF-R2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.6 V

Maximum Reverse Current:

1 uA

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

END

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Temperature Coefficient:

2.5 mV/Cel

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

BZV55-C5V6,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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