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SLP256B51

Onsemi

SLP256B51 by Onsemi

SLP256B51 by Onsemi is a DIFFUSED lens optoelectronic component with peak wavelength of 565nm. It operates b/w -25 °C to 80°C, emitting green light at 2.8V forward voltage. Ideal for applications requiring precise color output in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 732 parts In-Stock

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732

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Vyrian

USA . 518 parts In-Stock

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518

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Distributors (Availability)

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TANS Electronics

Latvia . 8,113 parts In-Stock

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8,113

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SupplyDigital Components

Austria . 7,584 parts In-Stock

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7,584

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Kulean Microsystems

USA . 3,000 parts In-Stock

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3,000

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Corphita

USA . 720 parts In-Stock

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720

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Corohmni

South Africa . 473 parts In-Stock

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473

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UHIMA Technologies

Türkiye . 395 parts In-Stock

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395

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Problanco Electronics

Mexico . 162 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the SLP256B51. This versatile optoelectronic component offers endless possibilities in various applications, from signage to display lighting. With a peak wavelength of 565nm and diffused lens type, this product ensures optimal performance in any environment. Trust Onsemi's expertise and innovation to deliver exceptional value and benefits to your projects. Elevate your designs with the SLP256B51 and see the difference quality makes.

Feature Benefit Bullets

Peak Wavelength (nm): 565

The peak wavelength of 565nm makes this product suitable for applications requiring specific emission of green light.

Lens Type: DIFFUSED

The diffused lens type ensures uniform and wide angle light dispersion, making it ideal for applications where even illumination is desired.

Maximum Operating Temperature: 80 °C

With a high maximum operating temperature of 80 °C, this product can withstand elevated temperatures and is suitable for use in demanding environments.

Height: 8 mm

The compact height of 8mm allows for easy integration and installation in space-constrained applications.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C ensures reliable operation even in cold environments.

Color At Wavelength: Green

The specific green color output at the peak wavelength of 565nm is ideal for applications that require green light emission.

Maximum Forward Voltage: 2.8 V

The low maximum forward voltage of 2.8V results in efficient power consumption and cost-effective operation.

Technical Specifications

Other Function Optoelectronics SLP256B51 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Color At Wavelength:

Green

Maximum Forward Voltage:

2.8 V

Lens Type:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Height:

8 mm

Peak Wavelength (nm):

565

Sub-Category:

Visible LEDs

Trade Compliance

SLP256B51 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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