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SLP271E51

Onsemi

SLP271E51 by Onsemi

SLP271E51 by Onsemi features peak wavelength of 565nm, max operating temp of 80 °C, and min luminous intensity of 0.0007cd. Ideal for applications requiring red light emission with two LEDs in array, such as automotive lighting and signage displays.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 661 parts In-Stock

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Digiode

USA . 590 parts In-Stock

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Problanco Electronics

Mexico . 8,216 parts In-Stock

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SupplyDigital Components

Austria . 3,599 parts In-Stock

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TANS Electronics

Latvia . 2,632 parts In-Stock

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UHIMA Technologies

Türkiye . 868 parts In-Stock

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Corohmni

South Africa . 355 parts In-Stock

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Kulean Microsystems

USA . 189 parts In-Stock

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Corphita

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Overview

Experience the brilliance of the SLP271E51 by Onsemi, a top-tier manufacturer known for delivering high-quality optoelectronics. This product offers unmatched value with its vibrant red color and peak wavelength of 565nm, making it perfect for a variety of applications. Whether you're looking to enhance your lighting design or create eye-catching displays, this LED array with 2 LEDs is sure to impress. Trust in Onsemi for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Peak Wavelength (nm): 565

The specific peak wavelength of 565 nm ensures consistent and accurate color output, making it ideal for applications requiring precise color representation.

Maximum Operating Temperature: 80 °C

With a high maximum operating temperature of 80 °C, this product can withstand elevated temperatures, allowing for reliable performance in various environments.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C enables this product to function even in cold conditions, making it versatile for use in diverse settings.

Minimum Luminous Intensity: 0.0007 cd

Despite its low minimum luminous intensity, this product is suitable for applications where subtle illumination is required, providing a delicate yet effective lighting solution.

Color At Wavelength: Red

The specific color output of red ensures a vibrant and eye-catching display, making this product suitable for applications where visual impact is important.

No. of LEDs in Array: 2

Having two LEDs in the array provides redundancy and increases reliability, ensuring continued operation in case one LED fails.

Maximum Forward Voltage: 2.8 V

The maximum forward voltage of 2.8 V allows for efficient power consumption, making this product energy-efficient and cost-effective in the long run.

Technical Specifications

Other Function Optoelectronics SLP271E51 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Color At Wavelength:

Red

Maximum Forward Voltage:

2.8 V

Minimum Luminous Intensity:

.0007 cd

No. of LEDs in Array:

2

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

565

Sub-Category:

Other Optoelectronics

Trade Compliance

SLP271E51 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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