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SBR200-10JS

Onsemi

SBR200-10JS by Onsemi

SBR200-10JS by Onsemi is a Schottky rectifier diode with 100V peak reverse voltage and 20A output current. It features a common cathode configuration, 2 elements, and is designed for flange mount applications. Ideal for high-power electronics requiring efficient rectification in a compact package.

Median Price

$1.548

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 141,205 parts In-Stock

1+ parts

-

100+ parts

$1.520

1k+ parts

$1.260

10k+ parts

$1.120

141,205

-

$1.520

$1.260

$1.120

Verical

USA . 141,205 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.575

10k+ parts

$1.400

141,205

-

-

$1.575

$1.400

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,512 parts In-Stock

1+ parts

$1.188

100+ parts

-

1k+ parts

-

10k+ parts

-

1,512

$1.188

-

-

-

Vyrian

USA . 2,259 parts In-Stock

1+ parts

$1.250

100+ parts

-

1k+ parts

-

10k+ parts

-

2,259

$1.250

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.037

100+ parts

$0.034

1k+ parts

$0.030

10k+ parts

-

500

$0.037

$0.034

$0.030

-

Corphita

USA . 568 parts In-Stock

1+ parts

$1.125

100+ parts

-

1k+ parts

-

10k+ parts

-

568

$1.125

-

-

-

Corohmni

South Africa . 311 parts In-Stock

1+ parts

$1.250

100+ parts

-

1k+ parts

-

10k+ parts

-

311

$1.250

-

-

-

Component Stockers USA

USA . 126,944 parts In-Stock

1+ parts

$1.270

100+ parts

$1.190

1k+ parts

$1.080

10k+ parts

$1.080

126,944

$1.270

$1.190

$1.080

$1.080

Microchip USA

USA . 2,133 parts In-Stock

1+ parts

$7.800

100+ parts

-

1k+ parts

-

10k+ parts

-

2,133

$7.800

-

-

-

Continental Prestige Electronics

USA . 141,205 parts In-Stock

1+ parts

-

100+ parts

$1.200

1k+ parts

-

10k+ parts

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141,205

-

$1.200

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

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56,986

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-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 19,445 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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19,445

-

-

-

-

TANS Electronics

Latvia . 8,312 parts In-Stock

1+ parts

-

100+ parts

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8,312

-

-

-

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SupplyDigital Components

Austria . 7,980 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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7,980

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-

-

-

Kulean Microsystems

USA . 5,992 parts In-Stock

1+ parts

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5,992

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Problanco Electronics

Mexico . 4,361 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,361

-

-

-

-

UHIMA Technologies

Türkiye . 424 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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424

-

-

-

-

Kepictronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Unlock a world of possibilities with the SBR200-10JS diode rectifier by Onsemi. Known for their top-notch quality and cutting-edge technology, Onsemi's diodes are trusted by professionals worldwide. Perfect for a variety of applications, this common cathode diode offers a maximum output current of 20A and a maximum repetitive peak reverse voltage of 100V. Whether you're working on power supplies, converters, or inverters, the SBR200-10JS provides unmatched efficiency and reliability, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the diode elements, ensuring durability and reliability.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy connection and common reference point for the two diode elements, simplifying circuit design.

Package Shape: RECTANGULAR

Rectangular shape offers easy mounting and integration into electronic circuit boards, saving space and facilitating efficient assembly.

No. of Terminals: 3

Having 3 terminals allows for flexible connections and application in various circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables secure and stable mounting on a surface, ensuring mechanical stability in the application.

Diode Type: RECTIFIER DIODE

Rectifier diode is specifically designed for converting alternating current (AC) to direct current (DC), making it suitable for power supply applications.

Maximum Output Current: 20 A

High maximum output current rating allows for handling of heavy loads and high-power applications.

Technology: SCHOTTKY

Schottky diode technology offers low forward voltage drop and fast switching characteristics, ideal for high-frequency applications and efficient power conversion.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical connection and easy soldering onto the circuit board, ensuring secure attachment.

Maximum Repetitive Peak Reverse Voltage: 100 V

High maximum repetitive peak reverse voltage rating ensures protection against reverse voltage spikes and overvoltage conditions in the circuit.

Maximum Non Repetitive Peak Forward Current: 180 A

High maximum non-repetitive peak forward current capability allows for handling of surge currents and transient events without damage to the diode.

Diode Element Material: SILICON

Silicon material for diode elements offers good conductivity and temperature stability, ensuring reliable performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers SBR200-10JS attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

GENERAL PURPOSE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

180 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

Terminal Position:

Trade Compliance

SBR200-10JS Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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