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SBR250-10JS

Onsemi

SBR250-10JS by Onsemi

SBR250-10JS by Onsemi is a SCHOTTKY RECTIFIER DIODE with max VF of 0.85V, max output current of 25A, and max reverse voltage of 100V. It operates up to 150 °C and handles non-repetitive forward current up to 120A. Ideal for high-power applications requiring efficient rectification.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,355 parts In-Stock

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Vyrian

USA . 690 parts In-Stock

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690

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Kulean Microsystems

USA . 6,202 parts In-Stock

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TANS Electronics

Latvia . 6,117 parts In-Stock

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Problanco Electronics

Mexico . 4,863 parts In-Stock

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SupplyDigital Components

Austria . 1,714 parts In-Stock

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Corphita

USA . 918 parts In-Stock

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UHIMA Technologies

Türkiye . 677 parts In-Stock

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Corohmni

South Africa . 474 parts In-Stock

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Overview

Experience superior quality with the SBR250-10JS by Onsemi, a leading manufacturer in the industry. This Schottky rectifier diode offers a maximum output current of 25A and a maximum repetitive peak reverse voltage of 100V, making it ideal for a wide range of applications. From power supplies to battery charging, this diode provides reliable performance and efficiency. Trust Onsemi's expertise and elevate your projects with the SBR250-10JS.

Feature Benefit Bullets

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand extreme heat conditions, making it suitable for a variety of applications.

Diode Type: RECTIFIER DIODE

Rectifier diodes are commonly used in power supply circuits and have a low forward voltage drop, making them energy-efficient.

Maximum Forward Voltage (VF): 0.85 V

A low forward voltage drop of 0.85 V means less power loss and higher efficiency in the circuit, reducing the overall energy consumption.

Maximum Output Current: 25 A

With a high maximum output current of 25 A, this diode can handle large amounts of current flow without overheating, making it reliable for power applications.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and lower forward voltage drops compared to conventional diodes, making them ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

With a high reverse voltage rating of 100 V, this diode can withstand reverse voltage spikes and prevent damage to the circuit.

Maximum Non Repetitive Peak Forward Current: 120 A

The high non-repetitive peak forward current rating of 120 A allows this diode to handle short-term overload conditions without failing, ensuring reliability in critical situations.

Technical Specifications

Diodes & Rectifiers SBR250-10JS attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Diode Type:

Maximum Forward Voltage (VF):

.85 V

Maximum Non Repetitive Peak Forward Current:

120 A

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

25 A

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Trade Compliance

SBR250-10JS Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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