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SBR250-10J

Onsemi

SBR250-10J by Onsemi

SBR250-10J by Onsemi is a Schottky rectifier diode with 100V peak reverse voltage and 12.5A output current. Featuring common cathode configuration, it has 2 elements in a rectangular package for flange mount applications. Ideal for high-power electronics requiring efficient rectification.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,741 parts In-Stock

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Vyrian

USA . 771 parts In-Stock

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SupplyDigital Components

Austria . 7,501 parts In-Stock

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TANS Electronics

Latvia . 6,814 parts In-Stock

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Problanco Electronics

Mexico . 6,163 parts In-Stock

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Kulean Microsystems

USA . 1,437 parts In-Stock

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UHIMA Technologies

Türkiye . 696 parts In-Stock

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Corohmni

South Africa . 180 parts In-Stock

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Corphita

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Overview

Unlock the power of efficient energy conversion with Onsemi's SBR250-10J diode rectifier. Designed with high-quality components and advanced technology, this rectifier offers unmatched performance and reliability. Whether you're in the automotive, industrial, or consumer electronics industry, the SBR250-10J is the perfect solution for your power management needs. Experience the value and benefits that Onsemi brings to the table with this versatile and dependable product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diodes, ensuring product durability and reliability.

Configuration: COMMON CATHODE, 2 ELEMENTS

Allows for easy and efficient circuit connections and simplifies design implementation.

Package Shape: RECTANGULAR

Facilitates easy integration into various electronic devices and circuit layouts.

Number of Terminals: 3

Enables versatile connectivity options and compatibility with different circuit setups.

Package Style (Meter): FLANGE MOUNT

Offers secure mounting for the diodes, ensuring stability and ease of installation.

Terminal Finish: Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

Provides good conductivity and corrosion resistance for reliable electrical connections.

Terminal Position: SINGLE

Simplifies circuit layout and connection, making installation easier and more efficient.

Diode Type: RECTIFIER DIODE

Ideal for converting alternating current (AC) to direct current (DC) with low voltage drops, making it suitable for various electronic applications.

Maximum Output Current: 12.5 A

Allows for handling high current loads, making it versatile for different power requirements.

Technology: SCHOTTKY

Provides fast switching speed and low forward voltage drop, ideal for high-frequency applications and power efficiency.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure soldering onto circuit boards, ensuring stable connections.

Number of Elements: 2

Provides redundancy or parallel operation for increased reliability and current handling capacity.

Maximum Repetitive Peak Reverse Voltage: 100 V

Can handle high reverse voltages effectively, ensuring protection against voltage spikes and transients.

Maximum Non Repetitive Peak Forward Current: 120 A

Capable of handling high current surges, ensuring robust performance under transient conditions.

Diode Element Material: SILICON

Offers good temperature stability and efficiency, making it suitable for various electronic applications.

Technical Specifications

Diodes & Rectifiers SBR250-10J attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, LOW NOISE

Application:

GENERAL PURPOSE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e2

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

12.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

Terminal Form:

Terminal Position:

Trade Compliance

SBR250-10J Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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