Loading...

SBR200-10G

Onsemi

SBR200-10G by Onsemi

SBR200-10G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.88V and output current of 20A. It operates at temperatures up to 150 °C, ideal for applications requiring high power efficiency in electronic circuits. The diode's flange mount package style and through-hole terminal form make it suitable for various industrial and automotive electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 863 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

863

-

-

-

-

Digiode

USA . 237 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

237

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 6,762 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,762

-

-

-

-

TANS Electronics

Latvia . 5,780 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,780

-

-

-

-

SupplyDigital Components

Austria . 5,377 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,377

-

-

-

-

Corphita

USA . 2,262 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,262

-

-

-

-

Problanco Electronics

Mexico . 891 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

891

-

-

-

-

UHIMA Technologies

Türkiye . 727 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

727

-

-

-

-

Corohmni

South Africa . 293 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

293

-

-

-

-

Overview

Unlock a world of possibilities with the SBR200-10G by Onsemi. As a leader in diodes and rectifiers, Onsemi delivers unmatched quality and reliability in every product. The SBR200-10G is no exception, offering customers a high-performance solution for their electronic needs. With a maximum output current of 20 A and a maximum repetitive peak reverse voltage of 100 V, this Schottky rectifier diode is ideal for a wide range of applications. Whether you're working on power supplies, converters, or motor controllers, the SBR200-10G provides exceptional value, efficiency, and performance. Upgrade your projects today with Onsemi's SBR200-10G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, ensuring long term reliability.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into various electronic circuits.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of applications.

Diode Type: RECTIFIER DIODE

Efficiently converts AC to DC, essential for power supply applications.

Maximum Forward Voltage (VF): 0.88 V

Low forward voltage drop leads to reduced power loss and higher efficiency.

Maximum Output Current: 20 A

Capable of handling high current loads, suitable for power applications.

Technology: SCHOTTKY

Schottky diodes have fast response times and low reverse recovery, ideal for high frequency applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

Can withstand high reverse voltages, important for reliable operation.

Maximum Non Repetitive Peak Forward Current: 180 A

Designed to handle short-term surge currents, providing robust protection.

Diode Element Material: SILICON

Silicon diodes offer good performance and reliability, making them a popular choice in electronics.

Technical Specifications

Diodes & Rectifiers SBR200-10G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.88 V

JEDEC-95 Code:

TO-220AB

Maximum Non Repetitive Peak Forward Current:

180 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

SBR200-10G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20