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SBE001

Onsemi

SBE001 by Onsemi

The Onsemi SBE001 is a Schottky rectifier diode with VF of 0.55V and 2A output current. With 30V reverse voltage and 20A forward current, it's ideal for surface mount applications in electronics for efficient power management.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,466 parts In-Stock

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Vyrian

USA . 1,063 parts In-Stock

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Kepictronics

USA . 39,000 parts In-Stock

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39,000

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TANS Electronics

Latvia . 8,028 parts In-Stock

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SupplyDigital Components

Austria . 6,586 parts In-Stock

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Kulean Microsystems

USA . 5,931 parts In-Stock

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Problanco Electronics

Mexico . 3,197 parts In-Stock

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Corphita

USA . 983 parts In-Stock

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UHIMA Technologies

Türkiye . 694 parts In-Stock

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Corohmni

South Africa . 187 parts In-Stock

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Overview

Unleash the power of innovation with the SBE001 by Onsemi, a high-quality rectifier diode that exceeds industry standards. Manufactured by Onsemi, a trusted name in the semiconductor industry, this SCHOTTKY technology diode offers maximum forward voltage of 0.55V and maximum output current of 2A. Ideal for a wide range of applications, this surface mount diode provides reliable performance and efficiency. Elevate your project with the SBE001 and experience unparalleled value, benefits, and advantages that only Onsemi can deliver.

Feature Benefit Bullets

Config: SINGLE

Using a single diode configuration simplifies the design and reduces space requirements, making this product a convenient choice for various applications.

Surface Mount: YES

Surface mount packaging enables easy installation and integration onto circuit boards, improving the manufacturability and reliability of electronic devices.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making this product suitable for power supply and rectification applications.

Maximum Forward Voltage (VF): 0.55 V

The low forward voltage drop of 0.55V ensures minimal power loss and high efficiency in the circuit, making it an energy-efficient choice.

Maximum Output Current: 2 A

Capable of handling up to 2A of current, this product is suitable for moderate to high power applications, providing reliable performance under load.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low reverse recovery time, making them ideal for high-frequency and high-efficiency applications, enhancing the overall performance of the product.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum reverse voltage of 30V, this diode can safely operate in circuits with moderate voltage requirements, ensuring durability and protection against voltage spikes.

Maximum Non Repetitive Peak Forward Current: 20 A

The high non-repetitive peak forward current rating of 20A allows the diode to withstand short surges of current without damage, making it robust and reliable in demanding conditions.

Technical Specifications

Diodes & Rectifiers SBE001 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

20 A

No. of Elements:

1

No. of Phases:

1

Maximum Output Current:

2 A

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

SBE001 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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