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SBE002-TL-W

Onsemi

SBE002-TL-W by Onsemi

SBE002-TL-W by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 1A. With a reverse recovery time of 0.01us, it operates at temperatures up to 125 °C, making it ideal for high-speed switching applications in electronics.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Flip Electronics

USA . 9,000 parts In-Stock

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Vyrian

USA . 2,879 parts In-Stock

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Digiode

USA . 1,314 parts In-Stock

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AZTECH Wire

Italy . 607 parts In-Stock

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$16.210

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Component Stockers USA

USA . 800 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 6,708 parts In-Stock

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TANS Electronics

Latvia . 5,520 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 2,845 parts In-Stock

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Corphita

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Corohmni

South Africa . 381 parts In-Stock

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UHIMA Technologies

Türkiye . 170 parts In-Stock

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Problanco Electronics

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Overview

Experience the superior quality and reliability of Onsemi with the SBE002-TL-W diode. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and durability in all their products. The SBE002-TL-W is designed for various applications, offering customers exceptional value and benefits. With a maximum forward voltage of 0.55 V and a maximum output current of 1 A, this SCHOTTKY rectifier diode provides efficient power management while maintaining a compact size. Trust Onsemi to deliver cutting-edge technology and unmatched performance with the SBE002-TL-W.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes this diode easy to use and integrate into various circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Maximum Reverse Recovery Time: 0.01 us

Ultra-fast reverse recovery time ensures minimal power loss and high efficiency in diode operation.

Maximum Operating Temperature: 125 °C

High maximum operating temperature makes this diode suitable for a wide range of applications and environments.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides good solderability and reliable electrical connections.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature minimizes thermal stress on the diode during soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for safe and efficient soldering of the diode onto the PCB.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC and various power supply applications.

Maximum Forward Voltage (VF): 0.55 V

Low maximum forward voltage drop ensures low power loss and energy efficiency in the circuit.

Maximum Output Current: 1 A

High maximum output current rating allows this diode to handle moderate power levels effectively.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speed and low forward voltage drop for high performance applications.

Maximum Repetitive Peak Reverse Voltage: 50 V

Suitable for applications where reverse voltage protection is required up to 50V.

Maximum Non Repetitive Peak Forward Current: 10 A

Capable of handling short-term high current surges without damage, providing robust protection to the circuit.

Diode Element Material: SILICON

Silicon diode element material offers good thermal stability and reliable performance in various operating conditions.

Technical Specifications

Diodes & Rectifiers SBE002-TL-W attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

10 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBE002-TL-W Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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