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SBE002-TL-E

Onsemi

SBE002-TL-E by Onsemi

SBE002-TL-E by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.55V. With a reverse recovery time of 0.01us, it operates at temperatures up to 125 °C. Ideal for applications requiring fast switching and low power loss in surface mount configurations.

Median Price

$0.125

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,300 parts In-Stock

1+ parts

$0.125

100+ parts

$0.118

1k+ parts

$0.106

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2,300

$0.125

$0.118

$0.106

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Distributors (In-Stock)

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Digiode

USA . 1,980 parts In-Stock

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$0.119

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1,980

$0.119

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Vyrian

USA . 279 parts In-Stock

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$0.125

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279

$0.125

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Distributors (Availability)

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Corphita

USA . 1,329 parts In-Stock

1+ parts

$0.113

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1,329

$0.113

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Corohmni

South Africa . 330 parts In-Stock

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$0.125

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330

$0.125

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QUARKTWIN TECHNOLOGY LTD

USA . 16,501 parts In-Stock

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16,501

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Problanco Electronics

Mexico . 4,295 parts In-Stock

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4,295

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SupplyDigital Components

Austria . 3,969 parts In-Stock

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Kulean Microsystems

USA . 2,920 parts In-Stock

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2,920

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Perfect Parts

USA . 2,576 parts In-Stock

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2,576

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Continental Prestige Electronics

USA . 2,300 parts In-Stock

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$0.115

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2,300

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$0.115

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TANS Electronics

Latvia . 1,798 parts In-Stock

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1,798

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UHIMA Technologies

Türkiye . 54 parts In-Stock

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54

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Overview

Discover the power of the SBE002-TL-E by Onsemi, a high-quality rectifier diode that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. With a maximum output current of 1A and a maximum forward voltage of only 0.55V, this diode provides efficient energy conversion and optimal performance. Whether you're designing power supplies, battery chargers, or LED drivers, the SBE002-TL-E offers exceptional value and benefits that will surely exceed your expectations. Trust Onsemi for all your diode needs and experience the difference in quality today.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes the diode easy to integrate into a circuit without additional complexity.

Surface Mount: YES

Surface mount design allows for easy and compact installation on circuit boards, saving space and simplifying assembly.

Maximum Reverse Recovery Time: 0.01 us

Fast reverse recovery time ensures efficient operation and minimal power loss in high-speed applications.

Maximum Operating Temperature: 125 °C

High operating temperature tolerance ensures reliability and performance in a variety of environments.

Terminal Finish: TIN BISMUTH

Tin Bismuth terminal finish offers good solderability and ensures strong and reliable connections.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes without compromising performance.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting alternating current (AC) to direct current (DC) with minimal voltage drop.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage ensures efficient power conversion and minimal energy loss in the circuit.

Maximum Output Current: 1 A

Capable of handling a maximum output current of 1 A, suitable for various small to medium power applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low voltage drop, making it suitable for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 50 V

Safely withstands up to 50 V in reverse voltage, providing protection against voltage spikes and transients.

Maximum Non Repetitive Peak Forward Current: 10 A

Can handle short duration peak currents of up to 10 A, ensuring reliable performance under high load conditions.

Diode Element Material: SILICON

Silicon diode element material offers good thermal stability and high efficiency, ideal for a wide range of applications.

Technical Specifications

Diodes & Rectifiers SBE002-TL-E attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

10 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Recovery Time:

.01 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN BISMUTH

Trade Compliance

SBE002-TL-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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