Loading...

SBE001-TL-W

Onsemi

SBE001-TL-W by Onsemi

SBE001-TL-W by Onsemi is a Schottky rectifier diode with max VF of 0.55V and max output current of 2A. It has a fast reverse recovery time of 0.02us, making it ideal for high-speed applications in electronics requiring low forward voltage drop and high efficiency. This small outline package diode operates b/w -55 to 125 °C, suitable for various temperature conditions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 19,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,000

-

-

-

-

Vyrian

USA . 11,818 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,818

-

-

-

-

Digiode

USA . 339 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

339

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 43 parts In-Stock

1+ parts

$8.570

100+ parts

-

1k+ parts

-

10k+ parts

-

43

$8.570

-

-

-

Kulean Microsystems

USA . 6,238 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,238

-

-

-

-

Problanco Electronics

Mexico . 5,538 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,538

-

-

-

-

SupplyDigital Components

Austria . 2,354 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,354

-

-

-

-

TANS Electronics

Latvia . 719 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

719

-

-

-

-

UHIMA Technologies

Türkiye . 207 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

207

-

-

-

-

Corohmni

South Africa . 160 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

160

-

-

-

-

Corphita

USA . 151 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

151

-

-

-

-

Overview

Experience the superior quality and reliability of Onsemi with the SBE001-TL-W diode rectifier. Perfect for a wide range of applications, this small outline package offers a fast reverse recovery time of 0.02 us and a maximum output current of 2A. With a maximum repetitive peak reverse voltage of 30V, this Schottky diode is ideal for high-speed switching in electronic circuits. Trust Onsemi for top-notch performance and efficiency, ensuring your projects run smoothly and effectively. Elevate your designs with the SBE001-TL-W and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Config: SINGLE

Simplified design and easy integration into electronic circuits.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Maximum Reverse Recovery Time: 0.02 us

Fast reverse recovery time leads to improved efficiency and performance of the diode.

Maximum Reverse Current: 100 uA

Low reverse current helps in reducing power losses and improving overall efficiency.

No. of Terminals: 6

Provides flexibility in connection options and compatibility with various circuits.

Maximum Operating Temperature: 125 °C

Allows for operation in a wide range of temperature conditions, ensuring reliability.

Terminal Finish: TIN BISMUTH

Enhanced terminal finish for improved connectivity and longevity.

Diode Type: RECTIFIER DIODE

Suitable for various rectification applications in electronic circuits.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop leads to minimal power losses and efficient operation.

Technology: SCHOTTKY

Schottky technology ensures fast switching speeds and low forward voltage drop.

Maximum Repetitive Peak Reverse Voltage: 30 V

Suitable for applications requiring lower reverse voltage handling capabilities.

Diode Element Material: SILICON

Silicon diodes are industry-standard for reliability and performance.

Technical Specifications

Diodes & Rectifiers SBE001-TL-W attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, LOW LEAKAGE CURRENT

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

20 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.02 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Position:

Trade Compliance

SBE001-TL-W Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 10