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SBA120-18J

Onsemi

SBA120-18J by Onsemi

SBA120-18J by Onsemi is a Schottky rectifier diode with 2 elements, max output current of 12A, and max reverse voltage of 180V. It is commonly used in power applications due to its common cathode configuration and isolated case connection. The package style is flange mount with a rectangular shape made of plastic/epoxy material.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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CPlus Electronics

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TANS Electronics

Latvia . 5,738 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,012 parts In-Stock

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Problanco Electronics

Mexico . 3,491 parts In-Stock

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Kulean Microsystems

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Corphita

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UHIMA Technologies

Türkiye . 416 parts In-Stock

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Corohmni

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SupplyDigital Components

Austria . 35 parts In-Stock

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Overview

Enhance your power applications with the SBA120-18J by Onsemi. This high-quality diode rectifier offers superior performance and reliability, thanks to its advanced Schottky technology and common cathode configuration. With a maximum output current of 12A and a maximum repetitive peak reverse voltage of 180V, this product is ideal for a wide range of power applications. Trust Onsemi's reputation for excellence in manufacturing to deliver a product that exceeds your expectations. Upgrade your power systems today with the SBA120-18J and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and insulation for the diode, ensuring durability and reliability in various operating conditions.

Config: COMMON CATHODE, 2 ELEMENTS

Having common cathode configuration with 2 elements allows for efficient current flow and better voltage regulation in the circuit.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and secure the diode in place within a circuit or on a PCB, enhancing ease of installation.

Maximum Output Current: 12 A

With a high output current rating of 12 A, this diode can handle heavy loads and power requirements, making it suitable for power applications.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speeds, enhancing efficiency and reducing power losses in the circuit.

Maximum Repetitive Peak Reverse Voltage: 180 V

With a high peak reverse voltage rating of 180 V, this diode provides reliable reverse voltage protection, ensuring safe operation in the circuit.

Technical Specifications

Diodes & Rectifiers SBA120-18J attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

POWER

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

180 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

Terminal Position:

Trade Compliance

SBA120-18J Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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