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SBA100-04Y(SMP-FD)

Onsemi

SBA100-04Y(SMP-FD) by Onsemi

SBA100-04Y(SMP-FD) by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 10A. It operates at a max temperature of 125 °C, suitable for applications requiring high-speed switching and low power loss in surface mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,088 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 7,129 parts In-Stock

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Kulean Microsystems

USA . 3,228 parts In-Stock

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Problanco Electronics

Mexico . 2,836 parts In-Stock

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SupplyDigital Components

Austria . 2,532 parts In-Stock

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Corphita

USA . 608 parts In-Stock

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UHIMA Technologies

Türkiye . 300 parts In-Stock

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Corohmni

South Africa . 291 parts In-Stock

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Overview

Elevate your electronics with the SBA100-04Y(SMP-FD) by Onsemi - a top-of-the-line Schottky rectifier diode that delivers exceptional performance and reliability. Manufactured by industry leader Onsemi, this surface mount diode is designed to withstand temperatures up to 125 °C, making it ideal for a wide range of applications. With a maximum output current of 10A and a low forward voltage of 0.55V, this diode offers unmatched efficiency and precision. Upgrade your projects today with the SBA100-04Y(SMP-FD) and experience the quality and value that only Onsemi can provide.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand elevated temperatures without degradation, ensuring reliability in various operating conditions.

Diode Type: RECTIFIER DIODE

Rectifier diodes are commonly used for converting AC to DC, making this product suitable for rectification applications.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop of 0.55V results in minimal power loss and efficient energy conversion, ideal for high performance applications.

Maximum Output Current: 10 A

With a high maximum output current capacity of 10A, this product can handle heavy loads and deliver reliable performance in demanding circuits.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, making them suitable for high frequency and high efficiency applications.

Maximum Repetitive Peak Reverse Voltage: 40 V

With a high peak reverse voltage rating of 40V, this diode can safely handle reverse voltage spikes and protect the circuit from damage.

Maximum Non Repetitive Peak Forward Current: 100 A

Capable of handling high non-repetitive peak forward currents of up to 100A, this diode provides robust protection against transient overcurrent events.

Technical Specifications

Diodes & Rectifiers SBA100-04Y(SMP-FD) attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

100 A

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

10 A

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

SBA100-04Y(SMP-FD) Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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