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SBA100-04Y(SMP)

Onsemi

SBA100-04Y(SMP) by Onsemi

SBA100-04Y(SMP) by Onsemi is a Schottky rectifier diode with max VF of 0.55V and 10A output current. It operates up to 125 °C, with VRRM of 40V and IFRM of 100A. Ideal for high-power applications requiring efficient voltage rectification in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,347 parts In-Stock

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Digiode

USA . 138 parts In-Stock

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138

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Kulean Microsystems

USA . 7,458 parts In-Stock

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7,458

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Problanco Electronics

Mexico . 4,996 parts In-Stock

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SupplyDigital Components

Austria . 3,482 parts In-Stock

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TANS Electronics

Latvia . 827 parts In-Stock

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827

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UHIMA Technologies

Türkiye . 437 parts In-Stock

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437

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Corphita

USA . 400 parts In-Stock

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400

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Corohmni

South Africa . 257 parts In-Stock

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Overview

Enhance your electronic projects with the SBA100-04Y(SMP) diode by Onsemi. This Schottky rectifier diode offers superior quality and reliability, making it perfect for a wide range of applications. Whether you're working on power supplies, battery chargers, or voltage regulators, this diode delivers optimal performance. With a maximum forward voltage of just 0.55V and a maximum output current of 10A, you can trust that your circuits will run efficiently. Trust Onsemi to provide you with high-quality components that exceed your expectations.

Feature Benefit Bullets

Maximum Operating Temperature: 125 °C

This diode can handle high temperatures, making it suitable for a wide range of applications where temperature fluctuations may occur.

Diode Type: RECTIFIER DIODE

Rectifier diodes are commonly used in power supplies and rectification circuits, making this product versatile and suitable for various electronic devices.

Maximum Forward Voltage (VF): 0.55 V

With a low forward voltage drop, this diode can efficiently convert AC to DC in power supply circuits, resulting in higher efficiency.

Maximum Output Current: 10 A

With a high output current rating, this diode can handle heavy loads and provide reliable performance in power circuits.

Technology: SCHOTTKY

Schottky diodes have fast switching characteristics and low forward voltage drop, making this product suitable for high-frequency applications and power efficiency.

Maximum Repetitive Peak Reverse Voltage: 40 V

This diode can handle high reverse voltages, providing protection against voltage spikes and ensuring the stability of the circuit.

Maximum Non Repetitive Peak Forward Current: 100 A

With a high peak forward current rating, this diode can withstand short-term overload conditions, making it reliable and durable in demanding environments.

Technical Specifications

Diodes & Rectifiers SBA100-04Y(SMP) attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Maximum Non Repetitive Peak Forward Current:

100 A

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

10 A

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Trade Compliance

SBA100-04Y(SMP) Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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