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PCRKA20065F8

Onsemi

PCRKA20065F8 by Onsemi

The Onsemi PCRKA20065F8 is a single diode with 650V reverse test voltage and 0.117us max reverse recovery time. Ideal for soft recovery applications, it operates b/w -55 to 150 °C, with VF of 1.7V and AEC-Q101 standard compliance.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,471 parts In-Stock

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Vyrian

USA . 956 parts In-Stock

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956

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Kulean Microsystems

USA . 7,680 parts In-Stock

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7,680

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SupplyDigital Components

Austria . 7,224 parts In-Stock

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Supply Digital

USA . 2,281 parts In-Stock

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Corphita

USA . 2,033 parts In-Stock

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TANS Electronics

Latvia . 1,622 parts In-Stock

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Problanco Electronics

Mexico . 999 parts In-Stock

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UHIMA Technologies

Türkiye . 458 parts In-Stock

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Corohmni

South Africa . 210 parts In-Stock

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Overview

Discover the superior quality and reliability of Onsemi's PCRKA20065F8 diode rectifier, designed for soft recovery applications. With a maximum reverse recovery time of 0.117 us and a reverse test voltage of 650 V, this surface-mount diode offers exceptional performance in a compact rectangular package. Ideal for automotive and industrial uses, this product ensures efficient operation at temperatures ranging from -55 to 150 °C. Trust Onsemi for cutting-edge technology and unparalleled value in diode rectifiers.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies installation and setup process.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards.

Maximum Reverse Recovery Time: 0.117 us

Low reverse recovery time ensures fast switching and efficient operation.

Maximum Reverse Current: 30 uA

Low reverse current minimizes power loss and enhances overall performance.

Package Shape: RECTANGULAR

Rectangular package shape facilitates compact and space-saving designs.

Reverse Test Voltage: 650 V

High reverse test voltage provides reliability and protection against reverse voltage breakdown.

Package Style (Meter): UNCASED CHIP

Uncased chip package style offers versatility and compatibility with various applications.

Application: SOFT RECOVERY

Soft recovery feature ensures smooth operation and reduces stress on the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in harsh environments.

Minimum Operating Temperature: -55 °C

Wide operating temperature range enables operation in both low and high temperature conditions.

Minimum Breakdown Voltage: 650 V

High minimum breakdown voltage offers protection against voltage spikes and surges.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standards ensures quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC and other rectification applications.

Maximum Forward Voltage (VF): 1.7 V

Low maximum forward voltage drop minimizes power loss and improves efficiency.

Terminal Form: NO LEAD

No lead terminal form offers flexibility and ease of connection in various setups.

Maximum Repetitive Peak Reverse Voltage: 650 V

High maximum repetitive peak reverse voltage ensures reliable operation over time.

Diode Element Material: SILICON

Silicon diode element material provides high performance and reliability for various applications.

Technical Specifications

Diodes & Rectifiers PCRKA20065F8 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

SOFT RECOVERY

Minimum Breakdown Voltage:

650 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JESD-30 Code:

R-XXUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

30 uA

Maximum Reverse Recovery Time:

.117 us

Reverse Test Voltage:

650 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

PCRKA20065F8 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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