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PCRKA30065F8

Onsemi

PCRKA30065F8 by Onsemi

PCRKA30065F8 by Onsemi is a SINGLE RECTIFIER DIODE with 650V reverse voltage, 0.1591us recovery time, and 30uA reverse current. Ideal for SOFT RECOVERY applications in -55 to 150 °C environments. This surface mount diode has AEC-Q101 certification and operates without leads.

Median Price

-

Lifecycle Status

EOL

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2

In-Stock Inventory

1k+

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Vyrian

USA . 3,038 parts In-Stock

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Digiode

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TANS Electronics

Latvia . 6,636 parts In-Stock

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Problanco Electronics

Mexico . 6,222 parts In-Stock

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Kulean Microsystems

USA . 6,195 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 2,896 parts In-Stock

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Supply Digital

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Corphita

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UHIMA Technologies

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Corohmni

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Overview

Discover the PCRKA30065F8 by Onsemi, a top-quality rectifier diode that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this diode is ideal for soft recovery applications with a maximum reverse test voltage of 650V. With a fast reverse recovery time and low reverse current, this diode ensures efficient operation even in extreme temperatures. Its surface mount configuration and compact design make it easy to integrate into various electronic devices. Trust Onsemi's expertise and invest in the PCRKA30065F8 for superior performance and peace of mind.

Feature Benefit Bullets

Config: SINGLE

Single configuration allows for easy integration into circuits without the need for complex wiring or additional components.

Surface Mount: YES

Surface mount capability enables compact and space-saving designs in electronic circuits.

Maximum Reverse Recovery Time: 0.1591 us

Fast reverse recovery time ensures efficient and reliable switching performance in high-speed applications.

Maximum Reverse Current: 30 uA

Low reverse current minimizes power loss and improves overall efficiency of the diode.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy placement and soldering onto circuit boards.

Reverse Test Voltage: 650 V

High reverse test voltage makes the diode suitable for applications requiring high voltage handling capabilities.

Package Style (Meter): UNCASED CHIP

Uncased chip package style offers excellent heat dissipation and ruggedness for reliable operation in harsh environments.

Application: SOFT RECOVERY

Soft recovery characteristics ensure smooth switching transitions and reduce electromagnetic interference in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in demanding industrial and automotive applications.

Minimum Operating Temperature: -55 °C

Wide temperature range enables operation in extreme cold conditions, making it suitable for various environmental conditions.

Minimum Breakdown Voltage: 650 V

High breakdown voltage provides protection against voltage spikes and surges, enhancing the reliability of the diode.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standards ensures high quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting alternating current (AC) to direct current (DC) with low forward voltage drop.

Maximum Forward Voltage (VF): 1.65 V

Low forward voltage drop results in minimal power dissipation and energy loss during operation.

Terminal Form: NO LEAD

No lead terminal form simplifies soldering and allows for compact designs in space-constrained applications.

Maximum Repetitive Peak Reverse Voltage: 650 V

High repetitive peak reverse voltage rating ensures reliable performance in power supply and high voltage applications.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and low leakage current for improved electrical performance.

Technical Specifications

Diodes & Rectifiers PCRKA30065F8 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

SOFT RECOVERY

Minimum Breakdown Voltage:

650 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.65 V

JESD-30 Code:

R-XXUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

30 uA

Maximum Reverse Recovery Time:

.1591 us

Reverse Test Voltage:

650 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

PCRKA30065F8 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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