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PCRKA20065F8M1

Onsemi

PCRKA20065F8M1 by Onsemi

PCRKA20065F8M1 by Onsemi is a RECTIFIER DIODE with 650V breakdown voltage, 0.117us reverse recovery time, and 30uA reverse current. Ideal for SOFT RECOVERY applications, it operates b/w -40 to 175 °C and meets AEC-Q101 standard.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,028 parts In-Stock

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Digiode

USA . 1,838 parts In-Stock

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Component Stockers USA

USA . 558 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 5,326 parts In-Stock

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SupplyDigital Components

Austria . 4,771 parts In-Stock

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Corphita

USA . 2,246 parts In-Stock

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Kulean Microsystems

USA . 1,740 parts In-Stock

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TANS Electronics

Latvia . 816 parts In-Stock

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UHIMA Technologies

Türkiye . 346 parts In-Stock

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Corohmni

South Africa . 255 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality PCRKA20065F8M1 diode by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees reliability and performance. This diode is ideal for applications requiring soft recovery, offering customers exceptional value and benefits. With a maximum reverse test voltage of 650V and a fast reverse recovery time of 0.117 us, this diode ensures efficiency and durability in your projects. Trust Onsemi to deliver superior products that exceed expectations.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes this diode simple and easy to use in various applications.

Surface Mount: YES

Surface mount feature allows for easy installation on circuit boards, saving time and effort.

Maximum Reverse Recovery Time: 0.117 us

Low reverse recovery time ensures fast switching speed and efficient performance.

Maximum Reverse Current: 30 uA

Low reverse current minimizes power loss and improves overall efficiency of the diode.

Package Shape: RECTANGULAR

Rectangular package shape makes it easy to mount and secure the diode in place.

Reverse Test Voltage: 650 V

High reverse test voltage ensures reliable operation and protection against voltage spikes.

Package Style (Meter): UNCASED CHIP

Uncased chip package style provides compact design and space-saving solution for electronic circuits.

Application: SOFT RECOVERY

Soft recovery feature minimizes voltage spikes and reduces electromagnetic interference in the circuit.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for versatile use in different environments and conditions.

Minimum Operating Temperature: -40 °C

Wide range of operating temperatures ensures reliability and performance in various temperature conditions.

Minimum Breakdown Voltage: 650 V

High minimum breakdown voltage provides protection against overvoltage situations and ensures safety of the system.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability in automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC current in electronic circuits.

Maximum Forward Voltage (VF): 1.7 V

Low forward voltage drop minimizes power loss and improves energy efficiency of the diode.

Terminal Form: NO LEAD

No lead terminal form provides easy installation and connection in electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 650 V

High repetitive peak reverse voltage rating ensures reliable performance and protection against reverse voltage.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in electronic circuits.

Technical Specifications

Diodes & Rectifiers PCRKA20065F8M1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

SOFT RECOVERY

Minimum Breakdown Voltage:

650 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JESD-30 Code:

R-XXUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

30 uA

Maximum Reverse Recovery Time:

.117 us

Reverse Test Voltage:

650 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

PCRKA20065F8M1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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