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PCRKA30065F8M1

Onsemi

PCRKA30065F8M1 by Onsemi

The Onsemi PCRKA30065F8M1 is a single diode with 0.1 us reverse recovery time, 30 uA reverse current, and 650 V reverse test voltage. Ideal for soft recovery applications, it operates b/w -40 to 175 °C and meets AEC-Q101 standard.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 32,000 parts In-Stock

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Vyrian

USA . 9,732 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 740 parts In-Stock

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Component Stockers USA

USA . 216 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 7,579 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 4,458 parts In-Stock

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TANS Electronics

Latvia . 1,969 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 477 parts In-Stock

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Corohmni

South Africa . 345 parts In-Stock

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Overview

Unleash the power of innovation with the PCRKA30065F8M1 by Onsemi. As a leader in the semiconductor industry, Onsemi delivers top-notch quality and reliability in their diodes and rectifiers. This product is designed for soft recovery applications, providing customers with seamless performance and efficiency. With a maximum reverse test voltage of 650V and a fast reverse recovery time of 0.1us, this diode offers unparalleled value and benefits. Trust Onsemi to provide you with cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies circuit design and reduces component count, making it a cost-effective choice.

Surface Mount: YES

Surface mount feature facilitates easy PCB assembly and saves space, ideal for compact electronic devices.

Maximum Reverse Recovery Time: 0.1 us

Fast reverse recovery time ensures efficient operation and minimizes power loss in high-speed switching applications.

Maximum Reverse Current: 30 uA

Low reverse current enables energy-efficient performance and improved reliability in the circuit.

Package Shape: RECTANGULAR

Rectangular package shape offers easy handling, placement, and secure soldering during assembly.

Reverse Test Voltage: 650 V

High reverse test voltage provides robust protection against reverse voltage spikes, ensuring device longevity.

Package Style (Meter): UNCASED CHIP

Uncased chip package style offers flexibility in mounting options and enhances thermal performance for reliable operation.

Application: SOFT RECOVERY

Soft recovery feature reduces voltage spikes and electromagnetic interference, improving overall circuit efficiency.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range ensures reliable performance in harsh environmental conditions.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows the diode to function efficiently in both cold and hot environments.

Minimum Breakdown Voltage: 650 V

High minimum breakdown voltage provides overvoltage protection and prevents damage to the circuit.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard guarantees high quality, reliability, and performance suitable for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type efficiently converts AC voltage to DC voltage with minimal power loss for various electronic devices.

Maximum Forward Voltage (VF): 1.65 V

Low maximum forward voltage drop ensures energy-efficient operation and minimal power dissipation in the circuit.

Terminal Form: NO LEAD

No-lead terminal form offers easy soldering, reduces assembly time, and enhances electrical connectivity.

Maximum Repetitive Peak Reverse Voltage: 650 V

High repetitive peak reverse voltage rating ensures reliable performance and protection against reverse voltage surges.

Diode Element Material: SILICON

Silicon diode element material provides high thermal stability, low forward voltage drop, and reliable operation in various applications.

Technical Specifications

Diodes & Rectifiers PCRKA30065F8M1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

SOFT RECOVERY

Minimum Breakdown Voltage:

650 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.65 V

JESD-30 Code:

R-XXUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

30 uA

Maximum Reverse Recovery Time:

.1 us

Reverse Test Voltage:

650 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

PCRKA30065F8M1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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