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NZ8F9V1SMX2WT5G

Onsemi

NZ8F9V1SMX2WT5G by Onsemi

NZ8F9V1SMX2WT5G by Onsemi is a Zener diode with a reverse test voltage of 6V and max power dissipation of 0.25W. It is ideal for applications requiring a nominal reference voltage of 9.1V, such as voltage regulation in electronic circuits. With a small outline package style and nickel palladium gold terminal finish, it offers reliable performance in various temperature conditions from -65 °C to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Flip Electronics

USA . 144,000 parts In-Stock

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Vyrian

USA . 6,175 parts In-Stock

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Digiode

USA . 1,512 parts In-Stock

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Component Stockers USA

USA . 88,641 parts In-Stock

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$0.410

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AZTECH Wire

Italy . 571 parts In-Stock

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$18.060

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571

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Kulean Microsystems

USA . 7,966 parts In-Stock

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SupplyDigital Components

Austria . 7,508 parts In-Stock

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Corphita

USA . 1,298 parts In-Stock

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TANS Electronics

Latvia . 292 parts In-Stock

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Corohmni

South Africa . 128 parts In-Stock

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UHIMA Technologies

Türkiye . 43 parts In-Stock

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Problanco Electronics

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Overview

Discover the NZ8F9V1SMX2WT5G by Onsemi, a top-quality Zener diode that offers unrivaled performance and reliability. Manufactured by Onsemi, a trusted industry leader, this Zener diode is perfect for various applications. With its high precision and low reverse current, this diode ensures optimal functionality and efficiency. Experience the value and benefits of the NZ8F9V1SMX2WT5G, providing customers with superior quality and performance for all their electronic needs. Trust in Onsemi for cutting-edge technology and unparalleled customer satisfaction.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and insulation, making the diode durable and reliable.

Config: SINGLE

Simplified design with a single zener diode configuration for easy installation and troubleshooting.

Working Test Current: 5 mA

Suitable for low current applications, ensuring efficient performance.

Surface Mount: YES

Easily mountable on circuit boards, saving space and facilitating automated assembly.

Maximum Reverse Current: 0.5 uA

Low reverse current minimizes power loss and ensures reliable operation.

Package Shape: RECTANGULAR

Compact rectangular shape allows for easy integration into various electronic devices.

Reverse Test Voltage: 6 V

Able to withstand reverse voltages up to 6 V, providing protection against voltage spikes.

No. of Terminals: 2

Simple two-terminal design for straightforward connection in circuits.

Terminal Finish: NICKEL PALLADIUM GOLD

Durable terminal finish for long-term reliability and stable electrical connections.

Maximum Power Dissipation: 0.25 W

Can handle power dissipation up to 0.25 W, suitable for various applications.

Diode Type: ZENER DIODE

Specifically designed for voltage regulation and protection in electronic circuits.

Technical Specifications

Zener Diodes NZ8F9V1SMX2WT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

30 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

60 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Nominal Reference Voltage:

9.1 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

6 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2.31 %

Working Test Current:

5 mA

Trade Compliance

NZ8F9V1SMX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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