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NZ8F13VSMX2WT5G

Onsemi

NZ8F13VSMX2WT5G by Onsemi

NZ8F13VSMX2WT5G by Onsemi is a Zener diode with a 13V nominal reference voltage, 10V reverse test voltage, and 2.31% max voltage tolerance. It is ideal for applications requiring precise voltage regulation in temperature ranges from -65 to 150 °C, with a small outline package style suitable for surface mount configurations.

Median Price

$0.067

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5,925 parts In-Stock

1+ parts

$0.370

100+ parts

$0.142

1k+ parts

$0.093

10k+ parts

$0.068

5,925

$0.370

$0.142

$0.093

$0.068

Rochester

USA . 79,840 parts In-Stock

1+ parts

-

100+ parts

$0.067

1k+ parts

$0.056

10k+ parts

$0.050

79,840

-

$0.067

$0.056

$0.050

Verical

USA . 79,840 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.062

79,840

-

-

-

$0.062

Distributors (In-Stock)

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Digiode

USA . 2,123 parts In-Stock

1+ parts

$0.052

100+ parts

-

1k+ parts

-

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2,123

$0.052

-

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Vyrian

USA . 1,117 parts In-Stock

1+ parts

$0.055

100+ parts

-

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1,117

$0.055

-

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Flip Electronics

USA . 168,000 parts In-Stock

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168,000

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Sensible Micro Corp

USA . 24,010 parts In-Stock

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24,010

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 237 parts In-Stock

1+ parts

$0.050

100+ parts

-

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237

$0.050

-

-

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Corohmni

South Africa . 157 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

-

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-

157

$0.055

-

-

-

Component Stockers USA

USA . 9,710 parts In-Stock

1+ parts

$0.420

100+ parts

$0.150

1k+ parts

$0.090

10k+ parts

-

9,710

$0.420

$0.150

$0.090

-

SupplyDigital Components

Austria . 4,350 parts In-Stock

1+ parts

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4,350

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QUARKTWIN TECHNOLOGY LTD

USA . 2,078 parts In-Stock

1+ parts

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2,078

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TANS Electronics

Latvia . 988 parts In-Stock

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988

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Problanco Electronics

Mexico . 413 parts In-Stock

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413

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UHIMA Technologies

Türkiye . 361 parts In-Stock

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361

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Kulean Microsystems

USA . 81 parts In-Stock

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81

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Overview

Unlock a world of possibilities with the NZ8F13VSMX2WT5G Zener Diode by Onsemi. Crafted with precision and expertise, this product boasts unparalleled quality and reliability. Ideal for a wide range of applications, this Zener diode offers customers exceptional value and benefits. Whether you're looking to ensure stable voltage regulation or protect sensitive electronics, this product delivers unmatched performance. Trust Onsemi to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the diode, making it suitable for a variety of applications.

Working Test Current: 5 mA

With a high working test current, this diode can handle higher loads and is reliable for different circuit requirements.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards.

Maximum Reverse Current: 0.1 uA

The low reverse current ensures minimal power loss and improves overall efficiency of the circuit.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and ensures a secure connection in the circuit.

Maximum Power Dissipation: 0.25 W

With a high maximum power dissipation, this diode can handle higher power levels without overheating.

Diode Type: ZENER DIODE

Being a Zener diode, it is specifically designed to maintain a constant voltage across its terminals, making it ideal for voltage regulation applications.

Nominal Reference Voltage: 13 V

The stable reference voltage of 13 V ensures consistent performance in voltage regulation circuits.

Technical Specifications

Zener Diodes NZ8F13VSMX2WT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

37 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e3

Maximum Knee Impedance:

80 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Nominal Reference Voltage:

13 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

10 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2.31 %

Working Test Current:

5 mA

Trade Compliance

NZ8F13VSMX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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