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NZ8F12VMX2WT5G

Onsemi

NZ8F12VMX2WT5G by Onsemi

NZ8F12VMX2WT5G by Onsemi is a Zener diode with 12V nominal reference voltage, 9V reverse test voltage, and 5% max voltage tolerance. It is used in applications requiring precise voltage regulation such as power supplies and voltage references. With a small outline package style and nickel palladium gold terminal finish, it operates b/w -65°C to 150°C efficiently.

Median Price

$0.061

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 7,500 parts In-Stock

1+ parts

$0.470

100+ parts

$0.206

1k+ parts

$0.113

10k+ parts

$0.075

7,500

$0.470

$0.206

$0.113

$0.075

Flip Electronics (Authorized)

USA . 160,000 parts In-Stock

1+ parts

-

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160,000

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Verical

USA . 56,000 parts In-Stock

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-

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$0.051

56,000

-

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-

$0.051

Rochester

USA . 7,649 parts In-Stock

1+ parts

-

100+ parts

$0.061

1k+ parts

$0.051

10k+ parts

$0.045

7,649

-

$0.061

$0.051

$0.045

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 290 parts In-Stock

1+ parts

$0.048

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290

$0.048

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Vyrian

USA . 101 parts In-Stock

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$0.050

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101

$0.050

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Flip Electronics

USA . 288,000 parts In-Stock

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288,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,933 parts In-Stock

1+ parts

$0.045

100+ parts

-

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1,933

$0.045

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Component Stockers USA

USA . 6,455 parts In-Stock

1+ parts

$0.050

100+ parts

$0.050

1k+ parts

$0.040

10k+ parts

-

6,455

$0.050

$0.050

$0.040

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Corohmni

South Africa . 187 parts In-Stock

1+ parts

$0.050

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187

$0.050

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QUARKTWIN TECHNOLOGY LTD

USA . 17,817 parts In-Stock

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17,817

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Continental Prestige Electronics

USA . 7,649 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.060

10k+ parts

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7,649

-

-

$0.060

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Kulean Microsystems

USA . 7,433 parts In-Stock

1+ parts

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7,433

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Problanco Electronics

Mexico . 7,368 parts In-Stock

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7,368

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TANS Electronics

Latvia . 3,099 parts In-Stock

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3,099

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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3,000

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SupplyDigital Components

Austria . 2,227 parts In-Stock

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2,227

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UHIMA Technologies

Türkiye . 444 parts In-Stock

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444

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Overview

Discover the NZ8F12VMX2WT5G Zener Diode by Onsemi, a top-quality component that delivers reliable performance and precision. Manufactured by Onsemi, a trusted industry leader known for their cutting-edge technology and innovative solutions, this Zener diode is perfect for a wide range of applications. With its high-quality construction and superior design, this diode ensures consistent voltage regulation and protection against electrical surges. Experience the value and benefits of using the NZ8F12VMX2WT5G in your projects, offering customers peace of mind and unmatched performance. Choose Onsemi for exceptional quality and reliability in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides protection for the internal components and makes the diode durable for long-term use.

Working Test Current: 5 mA

Efficiently operates at low current levels, making it suitable for various applications.

Maximum Reverse Current: 0.1 uA

Ensures minimal leakage current and high reliability in reverse bias situations.

No. of Terminals: 2

Simplified connection setup for easy integration into circuits.

Maximum Voltage Tolerance: 5 %

Provides consistent performance and accuracy in voltage regulation.

Maximum Operating Temperature: 150 °C

Suitable for use in high-temperature environments without compromising performance.

Nominal Reference Voltage: 12 V

Offers a stable reference voltage for precise signal conditioning and regulation.

Technical Specifications

Zener Diodes NZ8F12VMX2WT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

30 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

80 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Nominal Reference Voltage:

12 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

9 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

NZ8F12VMX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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