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NZ8F6V8MX2WT5G

Onsemi

NZ8F6V8MX2WT5G by Onsemi

NZ8F6V8MX2WT5G by Onsemi is a Zener diode with 6.8V nominal reference voltage, 3.5V reverse test voltage, and 5% max voltage tolerance. It is ideal for applications requiring precise voltage regulation in electronic circuits due to its small outline package style and unidirectional polarity.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 151,750 parts In-Stock

1+ parts

-

100+ parts

$0.039

1k+ parts

$0.032

10k+ parts

$0.029

151,750

-

$0.039

$0.032

$0.029

Verical

USA . 151,750 parts In-Stock

1+ parts

-

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-

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-

10k+ parts

$0.040

151,750

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-

-

$0.040

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,098 parts In-Stock

1+ parts

$0.031

100+ parts

-

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-

2,098

$0.031

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Flip Electronics

USA . 144,000 parts In-Stock

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144,000

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Vyrian

USA . 6,116 parts In-Stock

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6,116

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,288 parts In-Stock

1+ parts

$0.030

100+ parts

-

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-

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2,288

$0.030

-

-

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Corohmni

South Africa . 391 parts In-Stock

1+ parts

$0.033

100+ parts

-

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391

$0.033

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AZTECH Wire

Italy . 86 parts In-Stock

1+ parts

$19.760

100+ parts

-

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86

$19.760

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TANS Electronics

Latvia . 4,896 parts In-Stock

1+ parts

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4,896

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Problanco Electronics

Mexico . 3,933 parts In-Stock

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3,933

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SupplyDigital Components

Austria . 2,059 parts In-Stock

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2,059

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Kulean Microsystems

USA . 1,135 parts In-Stock

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1,135

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UHIMA Technologies

Türkiye . 425 parts In-Stock

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425

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Overview

Discover the NZ8F6V8MX2WT5G by Onsemi, a high-quality Zener Diode that offers reliable performance and precision. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for various applications where voltage regulation is crucial. With its small outline package and low reverse current, this Zener Diode provides excellent value and benefits to customers looking for efficient and stable voltage control. Upgrade your electronic designs with the NZ8F6V8MX2WT5G and experience enhanced performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the zener diode, making it suitable for various operating environments.

Working Test Current: 5 mA

The zener diode can handle a working test current of 5 mA, ensuring reliable and stable performance in electronic circuits.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto circuit boards, saving time and effort during production.

Maximum Reverse Current: 0.5 uA

With a low maximum reverse current, this zener diode maintains efficiency and prevents excessive power loss during operation.

Nominal Reference Voltage: 6.8 V

The zener diode has a precise nominal reference voltage of 6.8 V, which is ideal for applications requiring accurate voltage regulation.

Technical Specifications

Zener Diodes NZ8F6V8MX2WT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

40 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

60 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Nominal Reference Voltage:

6.8 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

3.5 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

NZ8F6V8MX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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