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NZ8F3V9SMX2WT5G

Onsemi

NZ8F3V9SMX2WT5G by Onsemi

NZ8F3V9SMX2WT5G by Onsemi is a Zener diode with 3.9V nominal reference voltage, 1000 ohm max knee impedance, and -65 to 150 °C operating temperature range. It is ideal for voltage regulation in electronic circuits due to its unidirectional polarity and silicon diode element material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,397 parts In-Stock

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Digiode

USA . 1,116 parts In-Stock

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AZTECH Wire

Italy . 1,027 parts In-Stock

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$21.260

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TANS Electronics

Latvia . 8,176 parts In-Stock

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SupplyDigital Components

Austria . 7,760 parts In-Stock

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Problanco Electronics

Mexico . 3,247 parts In-Stock

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Corphita

USA . 1,736 parts In-Stock

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Kulean Microsystems

USA . 1,340 parts In-Stock

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UHIMA Technologies

Türkiye . 872 parts In-Stock

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Corohmni

South Africa . 248 parts In-Stock

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Overview

Unlock the power of precision with the NZ8F3V9SMX2WT5G by Onsemi. Crafted with excellence by a trusted manufacturer, this Zener Diode offers unmatched quality and reliability. Ideal for a wide range of applications, this diode ensures consistent performance and protection. Experience the value of superior design and engineering with this product, providing customers with peace of mind and unparalleled benefits. Elevate your projects with the advantages that the NZ8F3V9SMX2WT5G brings, setting the standard for excellence in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the diode, ensuring reliability and durability.

Working Test Current: 5 mA

With a working test current of 5 mA, this zener diode can handle a moderate amount of current, making it suitable for various applications.

Maximum Reverse Current: 5 uA

The low maximum reverse current of 5 uA ensures minimal leakage current and efficient operation of the diode.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this zener diode can withstand high temperatures, making it suitable for industrial applications.

Maximum Power Dissipation: 0.25 W

The maximum power dissipation of 0.25 W indicates that this zener diode can handle a certain amount of power without overheating, ensuring reliable performance.

Technical Specifications

Zener Diodes NZ8F3V9SMX2WT5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e4

Maximum Knee Impedance:

1000 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Nominal Reference Voltage:

3.9 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

3.33 %

Working Test Current:

5 mA

Trade Compliance

NZ8F3V9SMX2WT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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