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NUF6105FCT1G

Onsemi

NUF6105FCT1G by Onsemi

NUF6105FCT1G by Onsemi is a 6-function data line filter with 35 dB attenuation at 800 MHz. Rated for 5V, it operates b/w -40 to 85 °C. Ideal for applications requiring surface mount filters with a max DC resistance of 120 ohm.

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AZTECH Wire

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Overview

Enhance the performance of your electronic devices with the NUF6105FCT1G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. The NUF6105FCT1G is a versatile data line filter that provides 6 functions for superior noise suppression and signal clarity. With IEC approvals, this filter offers a maximum attenuation frequency of 800 MHz and an attenuation of 35 dB, making it perfect for a wide range of applications. Trust in Onsemi to deliver value and benefits that will elevate your electronic projects to new heights.

Feature Benefit Bullets

Approvals (V) IEC: 6

Having 6 IEC approvals ensures that this data line filter meets international safety and quality standards.

Rated Voltage: 5 V

The 5V rated voltage allows this data line filter to be used in a wide range of devices without risk of overloading.

Attenuation At Maximum Frequency: 35 dB

With a high attenuation of 35 dB at the maximum frequency, this data line filter effectively suppresses unwanted noise and interference.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures that this data line filter can perform reliably even in harsh environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows this data line filter to function in a wide range of temperature conditions.

Maximum Attenuation Frequency: 800 MHz

With a maximum attenuation frequency of 800 MHz, this data line filter can effectively filter out high-frequency interference signals.

Technical Specifications

Data Line Filters NUF6105FCT1G attributes and parameters. Explore more Data Line Filters devices from Onsemi

Specs

Additional Features:

CUT-OFF FREQUENCY AT 100 MHZ; PI TYPE CIRCUIT

Approvals (V):

IEC

Maximum Attenuation Frequency:

800 MHz

Attenuation At Maximum Frequency:

35 dB

Capacitance:

54 uF

Maximum DC Resistance:

Filter Type:

Height:

.7 mm

JESD-609 Code:

e3

Length:

2.96 mm

Mounting Type:

SURFACE MOUNT

No. of Functions:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Impedance (ohm):

50 OHM

Package Material:

PLASTIC

Packing Method:

TAPE AND REEL

Dimensions:

L2.96XB1.33XH0.7 (mm)/L0.117XB0.052XH0.028 (inch)

Rated Voltage:

5 V

Sub-Category:

Data Line Filters

Terminal Finish:

Matte Tin (Sn)

Width (mm):

1.33

Trade Compliance

NUF6105FCT1G Filters trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8504.50.80.00

SB

8504.50.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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