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NSVG1001MXT1G

Onsemi

NSVG1001MXT1G by Onsemi

NSVG1001MXT1G by Onsemi is an AEC-Q100 rated RF switch with a compression point of 27 dBm, 0.95 dB max insertion loss, and 20 dB min isolation. It is a SPDT component suitable for automotive applications due to its wide operating temperature range (-40 °C to 105°C) and surface mounting feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,184 parts In-Stock

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Vyrian

USA . 1,360 parts In-Stock

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Kulean Microsystems

USA . 8,303 parts In-Stock

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Problanco Electronics

Mexico . 7,796 parts In-Stock

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SupplyDigital Components

Austria . 7,465 parts In-Stock

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TANS Electronics

Latvia . 4,544 parts In-Stock

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Corphita

USA . 2,134 parts In-Stock

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Corohmni

South Africa . 291 parts In-Stock

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UHIMA Technologies

Türkiye . 134 parts In-Stock

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Overview

Experience seamless connectivity with the NSVG1001MXT1G RF/Microwave Switch by Onsemi, a trusted leader in electronic components. Ideal for automotive and industrial applications, this AEC-Q100 qualified switch offers reliable performance and durability. With a high compression point of 27 dBm and minimal insertion loss, this component ensures optimal signal integrity. Upgrade your systems with Onsemi's cutting-edge technology and unlock endless possibilities in RF and microwave communication.

Feature Benefit Bullets

Screening Level: AEC-Q100

This product is automotive-grade qualified, ensuring reliability and performance in harsh environments.

Compression Point (1 dB): 27 dBm

With a high compression point, this switch can handle high power levels without distortion, making it suitable for RF/microwave applications.

Construction: COMPONENT

The component-based construction of this switch allows for easy integration into existing systems and flexibility in design.

No. of Terminals: 6

Having 6 terminals provides versatility in connectivity options and allows for complex signal routing.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this switch can withstand elevated temperatures, making it suitable for a wide range of environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable operation even in cold conditions, increasing the versatility of this switch.

Maximum Insertion Loss: 0.95 dB

With a low insertion loss, this switch minimizes signal attenuation and maintains signal integrity for improved performance.

Nominal On Time: 0.1 us

The fast switching time of 0.1 microseconds ensures quick signal switching, making this switch suitable for high-speed applications.

RF or Microwave Device Type: SPDT

Being a Single-Pole Double-Throw (SPDT) switch, this product offers flexibility in signal routing and switching options.

Minimum Isolation: 20 dB

With a high isolation level, this switch minimizes signal interference and ensures clean signal routing, improving overall system performance.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy installation on PCBs, saving space and simplifying the assembly process.

Technical Specifications

RF/Microwave Switches NSVG1001MXT1G attributes and parameters. Explore more RF/Microwave Switches devices from Onsemi

Specs

Compression Point (1 dB):

27 dBm

Construction:

COMPONENT

Maximum Insertion Loss:

.95 dB

Minimum Isolation:

20 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Nominal On Time:

.1 us

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Equivalence Code:

SOLCC6,.04,14

RF or Microwave Device Type:

Screening Level:

Trade Compliance

NSVG1001MXT1G RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8536.50.70.00

SB

8536.50.70.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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