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NSVG1002MXT1G

Onsemi

NSVG1002MXT1G by Onsemi

NSVG1002MXT1G by Onsemi is an RF/Microwave Switch with AEC-Q100 screening. It features a Compression Point of 30 dBm, Max Insertion Loss of 0.95 dB, and Min Isolation of 20 dB. Ideal for automotive applications due to its wide operating temperature range (-40 to 105 °C) and SP3T configuration supporting frequencies from 1-6000 MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,124 parts In-Stock

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Digiode

USA . 780 parts In-Stock

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780

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 3,826 parts In-Stock

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3,826

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Kulean Microsystems

USA . 2,916 parts In-Stock

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Problanco Electronics

Mexico . 1,625 parts In-Stock

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SupplyDigital Components

Austria . 1,229 parts In-Stock

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1,229

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UHIMA Technologies

Türkiye . 536 parts In-Stock

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536

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Corphita

USA . 385 parts In-Stock

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385

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Corohmni

South Africa . 322 parts In-Stock

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Overview

Experience seamless performance and unmatched reliability with the NSVG1002MXT1G by Onsemi. As a leading manufacturer in the industry, Onsemi's RF/Microwave Switches are built to the highest standards, providing exceptional quality and durability. Ideal for a wide range of applications, this SP3T switch offers superior performance with a minimum isolation of 20 dB and a maximum insertion loss of 0.95 dB. Whether you're in telecommunications, aerospace, or automotive industries, this AEC-Q100 compliant component ensures optimal functionality even in extreme temperatures. Trust Onsemi to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Screening Level AEC-Q100

The AEC-Q100 screening ensures that the product meets automotive industry standards for reliability and quality, making it suitable for use in automotive applications.

Compression Point (1 dB)

The high compression point of 30 dBm indicates the ability of the switch to handle high power levels without distortion, ensuring reliable performance in high power applications.

Construction

Being a component-level construction indicates that the switch is designed with high-quality materials and manufacturing processes, ensuring durability and long-term performance.

No. of Terminals

With 8 terminals, the switch offers versatility in connectivity options, allowing for flexible integration into different system architectures.

Maximum Operating Temperature

The wide operating temperature range of -40 °C to 105°C ensures that the switch can perform reliably in various environmental conditions, making it suitable for a range of applications.

Maximum Insertion Loss

The low insertion loss of 0.95 dB ensures minimal signal loss when the switch is in the signal path, maintaining signal integrity and performance.

Nominal On Time

The fast on-time of 0.1 microseconds allows for quick switching between channels, reducing signal latency and improving overall system efficiency.

RF or Microwave Device Type

As an SP3T switch, this product offers flexibility in signal routing and configuration, making it suitable for a variety of RF and microwave applications that require switching between three paths.

Minimum Isolation

The minimum isolation of 20 dB ensures that signals on different paths remain independent, reducing interference and crosstalk between channels.

Minimum Operating Frequency

With a minimum operating frequency of 1000 MHz, the switch can handle a wide range of RF and microwave signals, making it versatile for use in different frequency bands.

Mounting Feature

The surface mounting feature allows for easy and secure integration of the switch onto circuit boards, simplifying the assembly process and saving space in the system design.

Maximum Operating Frequency

With a maximum operating frequency of 6000 MHz, the switch can handle high-frequency signals, making it suitable for applications that require switching in the microwave frequency range.

Technical Specifications

RF/Microwave Switches NSVG1002MXT1G attributes and parameters. Explore more RF/Microwave Switches devices from Onsemi

Specs

Compression Point (1 dB):

30 dBm

Construction:

COMPONENT

Maximum Insertion Loss:

.95 dB

Minimum Isolation:

20 dB

Mounting Feature:

No. of Functions:

1

No. of Terminals:

8

Nominal On Time:

.1 us

Maximum Operating Frequency:

6000 MHz

Minimum Operating Frequency:

1000 MHz

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Equivalence Code:

SOLCC6,.06,16

RF or Microwave Device Type:

Screening Level:

Trade Compliance

NSVG1002MXT1G RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8536.50.70.00

SB

8536.50.70.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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